AOT7N70

AOT7N70/AOTF7N70 700V, 7A N-Channel MOSFET General Description Product Summary The AOT7N70 & AOTF7N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 800V@150℃ 7A RDS(ON) (at VGS=10V) < 1.8Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT7N70L & AOTF7N70L Top View D TO-220F TO-220 G D S G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT7N70 VDS Drain-Source Voltage 700 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C AOTF7N70 V 7* 7 ID Units V 4.2 4.2* A Pulsed Drain Current C IDM Avalanche Current C IAR 5 A Repetitive avalanche energy C EAR 187 mJ Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS 375 50 5 mJ 24 dv/dt PD 38.5 W 0.3 -55 to 150 W/ oC °C 300 °C TL AOT7N70 65 AOTF7N70 65 Units °C/W 0.5 0.63 -3.25 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.2.0: June 2013 198 1.6 TJ, TSTG Symbol RθJA RθCS V/ns www.aosmd.com Page 1 of 6 AOT7N70/AOTF7N70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 700 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 800 V ID=250µA, VGS=0V 0.8 V/ oC VDS=700V, VGS=0V 1 VDS=560V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A gFS Forward Transconductance VDS=40V, ID=3.5A 6.7 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS ISM 4 4.5 nΑ V 1.48 1.8 Ω 1 V Maximum Body-Diode Continuous Current 7 A Maximum Body-Diode Pulsed Current 24 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=560V, ID=7A 3 S 782 978 1175 pF 64 80 104 pF 5.5 7 10 pF 2 4 6 Ω 16 20.5 25 nC 4 5 6 nC 6.3 7.9 11.8 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=7A,dI/dt=100A/µs,VDS=100V 215 270 325 Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V 4.7 5.9 7.1 Body Diode Reverse Recovery Time VGS=10V, VDS=350V, ID=7A, RG=25Ω 23 ns 50 ns 53 ns 38 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using