AOT9604

AOT5N60 600V, 5A N-Channel MOSFET formerly engineering part number AOT9604 General Description The AOT5N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 5A RDS(ON) < 1.8 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! Top View TO-220 D G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain B Current Pulsed Drain Current Avalanche Current C C G C Units V V A A mJ mJ V/ns W W/ C °C °C o TC=25°C TC=100°C ID IDM IAR EAR EAS dV/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 54 0.76 5 3.2 16 2.6 100 200 5 132 1.05 -50 to 150 300 Maximum 65 0.5 0.95 Repetitive avalanche energy Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-Sink D,F Maximum Junction-to-Case A A Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT5N60 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125°C VDS=0V, VGS=±30V VDS=VGS, ID=250µA VGS=10V, ID=2.5A VDS=40V, ID=2.5A 3 3.9 1.44 7.7 0.76 1 5 16 466 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 46 4.2 2.9 583 58.4 5.3 3.7 16.8 VGS=10V, VDS=480V, ID=5A 3.1 8.5 21 VGS=10V, VDS=300V, ID=5A, RG=25Ω IF=5A,dI/dt=100A/µs,VDS=100V 44 35 37 208 2 700 70 6.5 5.6 20 4 11 25 55 45 45 250 2.4 600 700 0.65 1 10 ±100 5 1.8 V V V/ C µA nA V Ω S V A A pF pF pF Ω nC nC nC ns ns ns ns ns µC o Parameter Conditions Min Typ Max Units Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using