AOT9N40

AOT9N40 400V,8A N-Channel MOSFET General Description Product Summary The AOT9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 500V@150℃ 8A < 0.8Ω ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT9N40L Top View D TO-220 G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID AOT9N40 400 Units V ±30 V 8 5 A IDM 22 Avalanche Current C IAR 3.2 A Repetitive avalanche energy C EAR 150 mJ Single pulsed avalanche energy G EAS Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC dv/dt 300 5 132 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient TJ, TSTG 1 -55 to 150 W/ C °C 300 °C AOT9N40 65 Units °C/W 0.5 0.95 °C/W °C/W A Maximum Case-to-sink Maximum Junction-to-Case Rev 0: Dec 2010 PD TL Symbol RθJA RθCS RθJC www.aosmd.com o Page 1 of 5 AOT9N40 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 400 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 500 V ID=250µA, VGS=0V 0.4 o V/ C VDS=400V, VGS=0V 1 VDS=320V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS=5V ID=250µA VGS=10V, ID=4A gFS Forward Transconductance VDS=40V, ID=4A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current ISM DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz ±100 3.4 µA 4 4.5 nΑ V 0.64 0.8 Ω 1 V 8 0.75 S 8 A 22 A 500 630 760 pF 45 73 100 pF 2 5.7 9 pF 1.2 2.6 4.0 Ω 10 13.1 16 nC VGS=10V, VDS=320V, ID=8A 3.9 nC Qgd Gate Drain Charge 4.8 nC tD(on) Turn-On DelayTime 17 ns tr Turn-On Rise Time 52 ns tD(off) Turn-Off DelayTime 25 ns VGS=10V, VDS=200V, ID=8A, RG=25Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A,dI/dt=100A/µs,VDS=100V 150 195 240 Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 1.5 1.9 2.3 30 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using