AOT9N50

AOT9N50/AOTF9N50 500V, 9A N-Channel MOSFET General Description Product Summary The AOT9N50 & AOTF9N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS TO-220 G D Top View G S D ID (at VGS=10V) 600V@150℃ 9A RDS(ON) (at VGS=10V) < 0.85W 100% UIS Tested 100% Rg Tested TO-220F D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT9N50 Drain-Source Voltage VDS 500 Gate-Source Voltage ±30 VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID AOTF9N50 Units V V 9 9* 6.0 6* A IDM 30 Avalanche Current C IAR 3.2 A Repetitive avalanche energy C EAR 154 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS dv/dt 307 5 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG PD 38.5 0.3 TL Symbol RqJA RqCS -55 to 150 W/ oC °C 300 °C AOT9N50 65 AOTF9N50 65 Units °C/W 0.5 0.65 -3.25 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev 4.0: January 2021 192 1.5 www.aosmd.com Page 1 of 6 AOT9N50/AOTF9N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) VDS=5V ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ID=250μA, VGS=0V, TJ=150°C 600 V ID=250μA, VGS=0V 0.56 V/ C o VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 ±100 mA 4 4.5 nA V VGS=10V, ID=4.5A 0.66 0.85 W VDS=40V, ID=4.5A 10 3.4 S 1 V Maximum Body-Diode Continuous Current 9 A Maximum Body-Diode Pulsed Current 30 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=9A 0.74 694 868 1042 pF 74 93 112 pF 6.2 7.8 9.4 pF 2 4 6 W 15 23.6 28 nC 4 5.2 6.2 nC 8.5 10.6 12.7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=9A,dI/dt=100A/ms,VDS=100V 195 248 300 Qrr Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/ms,VDS=100V 2.5 3.5 4.5 Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=9A, RG=25W 19.5 ns 47 ns 51.5 ns 38.5 ns ns mC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using