AOTE32136C

AOTE32136C 20V N-Channel MOSFET General Description Product Summary • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant ID (at VGS=4.5V) 20V 7A RDS(ON) (at VGS=4.5V) < 20mΩ RDS(ON) (at VGS=2.5V) < 26mΩ VDS ESD protection Applications • Ideal for Load Switch Top View D TSSOP8 Bottom View D TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G G S S Orderable Part Number Package Type Form Minimum Order Quantity AOTE32136C TSSOP-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: March 2019 Steady-State Steady-State RqJA RqJL www.aosmd.com A 1.5 W 0.9 TJ, TSTG Symbol t ≤ 10s V 38 PD TA=70°C ±12 5.5 IDM TA=25°C B Units V 7 ID TA=70°C C Maximum 20 -55 to 150 Typ 64 115 70 °C Max 83 140 85 Units °C/W °C/W °C/W Page 1 of 5 AOTE32136C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250mA V 1 TJ=55°C 0.45 ±10 μA 0.85 1.25 V 15 20 20 28 26 RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=6.3A 18 gFS Forward Transconductance VDS=5V, ID=7A 50 VSD Diode Forward Voltage IS=1A, VGS=0V 0.6 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=4.5V, VDS=10V, ID=7A μA 5 VGS=4.5V, ID=7A Coss Units 20 VDS=20V, VGS=0V IDSS Max 2 mΩ mΩ S 1 V 2 A 660 pF 100 pF 80 pF 4 6 Ω 7 14 nC 1 nC Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time 10 ns tD(off) Turn-Off DelayTime 32 ns tf trr Turn-Off Fall Time 11 ns IF=7A, di/dt=500A/ms 8 Qrr Body Diode Reverse Recovery Charge IF=7A, di/dt=500A/ms 6 ns nC Body Diode Reverse Recovery Time VGS=4.5V, VDS=10V, RL=1.43W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1 1E-05 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=140°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: March 2019 www.aosmd.com Page 4 of 5 AOTE32136C Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit &&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: March 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5