AOTF10B60D

AOTF10B60D 600V, 10A AlphaIGBT TM with Diode General Description Product Summary The AlphaIGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copackage diode is targeted for minimal losses in motor control applications. VCE IC (TC=100°C) 600V 10A VCE(sat) (TC=25°C) 1.53V Top View C TO-220F G AOTF10B60D G C E E Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax Turn off SOA, VCE ≤ 600V, Limited by TJmax Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax AOTF10B60D 600 Units V ±20 V 20$ IC 10$ A I CM 40 A I LM 40 A 20 IF 10 A I FM 40 A Short circuit withstanding time VGE = 15V, VCE ≤ t SC 400V, Delay between short circuits ≥ 1.0s, TC=25°C 10 ms TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case PD T J , T STG TL Symbol R q JA R q JC R q JC 42 16.7 W -55 to 150 °C 300 °C AOTF10B60D 65 3 Units °C/W °C/W 4 °C/W $:TO220F IC Follow TO220 Rev.2.0: February 2021 www.aosmd.com Page 1 of 9 AOTF10B60D Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES I GES g FS Min IC=250μA, VGE=0V, TJ=25°C VGE=15V, IC=10A Collector-Emitter Saturation Voltage VGE=0V, IC=10A Diode Forward Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Gate-Emitter leakage current Forward Transconductance Max Units V 600 - - TJ=25°C - 1.53 1.8 TJ=125°C - 1.75 - TJ=150°C - 1.81 - TJ=25°C - 1.52 1.85 TJ=125°C - 1.48 - TJ=150°C - 1.44 - VCE=VGE, IC=250mA Gate-Emitter Threshold Voltage Typ - 5.6 - TJ=25°C - - 10 TJ=125°C - - 200 TJ=150°C - - 1000 V V V mA VCE=0V, VGE=±20V - - ±100 VCE=20V, IC=10A - 4.8 - nA S - 824 - pF - 68 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 2.7 - pF Qg Total Gate Charge - 17.4 - nC Q ge Gate to Emitter Charge VGE=15V, VCE=480V, IC=10A - 6.2 - nC Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=30W I C(SC) short circuits ≥ 1.0s VGE=0V, VCE=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Iductive, TJ=25°C) - 6.3 - nC - 43 - A - 3.2 - W t D(on) Turn-On DelayTime - 10 - ns tr Turn-On Rise Time - 15 - ns t D(off) Turn-Off Delay Time - 72 - ns tf Turn-Off Fall Time - 8.8 - ns E on Turn-On Energy - 0.26 - mJ E off Turn-Off Energy - 0.07 - mJ E total t rr Total Switching Energy - 0.33 - mJ - 105 - Q rr Diode Reverse Recovery Charge - 0.25 - ns mC I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Iductive, TJ=150°C) - 5 - A t D(on) Turn-On DelayTime - 10.4 - ns tr Turn-On Rise Time - 15.6 - ns t D(off) Turn-Off Delay Time - 91 - ns tf Turn-Off Fall Time - 10.4 - ns E on Turn-On Energy - 0.35 - mJ E off Turn-Off Energy - 0.16 - mJ E total t rr Total Switching Energy - 0.51 - mJ Diode Reverse Recovery Time - 194 - Q rr Diode Reverse Recovery Charge - 0.55 - ns mC I rm Diode Peak Reverse Recovery Current - 6.3 - A Q gc TJ=25°C VGE=15V, VCE=400V, IC=10A, RG=30W, Parasitic Inductance=100nH Diode Reverse Recovery Time TJ=25°C IF=10A,dI/dt=200A/ms,VCE=400V TJ=150°C VGE=15V, VCE=400V, IC=10A, RG=30W, Parasitic Inductance=100nH TJ=150°C IF=10A,dI/dt=200A/ms,VCE=400V APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev.2.0: February 2021 www.aosmd.com Page 2 of 9 AOTF10B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 60 20V 20V 60 17V 15V IC (A) IC (A) 50 40 13V 50 17V 40 15V 13V 30 30 20 VGE= 7V 10 11V 20 9V 10 11V 9V VGE=7V 0 0 0 1 2 3 4 5 6 7 0 VCE(V) Figure 1: Output Characteristic (Tj=25°C ) 1 2 3 4 5 6 7 VCE(V) Figure 2: Output Characteristic (Tj=150°C ) 50 50 VCE=20V -40°C -40°C 40 40 150°C 30 30 150°C IF (A) 20 20 10 10 0 25°C 0 4 7 10 13 16 0.0 VGE(V) Figure 3: Transfer Characteristic VCE(sat) (V) Time (mS) IC=20A IC=10A 2 1 IC=5A 25 50 75 100 2.0 2.5 3.0 45 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 125 150 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.2.0: February 2021 1.5 45 0 0 1.0 VF (V) Figure 4: Diode Characteristic 4 3 0.5 www.aosmd.com 0 Current(A) IC (A) 25°C 0 5 8 11 14 17 20 VGE (V) Figure 6: VGE vs. Short Circuit Time (VCE=400V,TC=25°C ) Page 3 of 9 AOTF10B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=480V IC=10A Cies 12 9 Capacitance (pF) VGE (V) 1000 6 3 Coes 100 10 0 Cres 1 0 4 8 12 16 20 0 Qg(nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 35 40 VCE(V) Figure 8: Capacitance Characteristic Ic (A) 100 10 1 10 100 1,000 VCE (V) Figure 10: Reverse Bias SOA (Tj=150°C,VGE=15V) 50 Power Disspation (W) 40 30 20 10 0 25 50 75 100 125 150 TCASE(°C) Figure 11: Power Disspation as a Function of Case Rev.2.0: February 2021 www.aosmd.com Page 4 of 9 AOTF10B60D ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10,000 Td(off) Tf Td(on) Tr 100 10 100 10 1 1 0 5 10 15 20 IC (A) Figure 12: Switching Time vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=30W) 0 25 1000 50 100 150 200 250 300 Rg (W) Figure 13: Switching Time vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=10A) 350 10 Td(off) Tf Td(on) Tr 8 100 VGE(TH)(V) Switching Time (nS) Td(off) Tf Td(on) Tr 1,000 Switching Time (nS) Switching Time (nS) 1000 6 4 10 2 0 1 0 50 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=10A,Rg=30W) Rev.2.0: February 2021 200 www.aosmd.com 0 30 60 90 120 150 TJ (°C) Figure 15: VGE(TH) vs. Tj Page 5 of 9 AOTF10B60D ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.5 1.5 Eoff Eoff Eon Eon 1.2 Switching Energy (mJ) SwitchIng Energy (mJ) 1.2 Etotal 0.9 0.6 0.3 Etotal 0.9 0.6 0.3 0 0.0 0 5 10 15 20 25 0 IC (A) Figure 16: Switching Loss vs. I C (Tj=150°C,VGE=15V,VCE=400V,Rg=30W) 50 150 200 250 300 Rg (W) Figure 17: Switching Loss vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=10A) 0.8 0.8 Eoff Eoff Eon Eon 0.6 0.6 Switching Energ y (mJ) Etotal Switching Energy (mJ) 100 0.4 0.2 0 0 25 50 75 100 125 150 175 0.4 0.2 0.0 TJ (°C) Figure 18: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=10A,Rg=30W) Rev.2.0: February 2021 Etotal www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 19: Switching Loss vs. VCE (Tj=150°C,VGE=15V,IC=10A,Rg=30W) Page 6 of 9 AOTF10B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-03 2.2 15A 1.E-04 1.7 10A VSD (V) VCE=400V 1.E-06 5A IF=1A 0.7 1.E-07 1.E-08 0.2 0 25 50 75 100 125 150 175 0 1000 100 900 90 800 80 40 300 30 25°C 25°C Trr (nS) 50 400 200 10 15 20 6 25°C 150°C 4 50 2 25°C 0 0 0 IF(A) Figure 22: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/ms) 5 10 15 20 25 IS (A) Figure 23: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/ms) 80 700 8 Trr 150 25 800 175 S 0 5 150 10 10 0 0 125 150°C 100 20 Irm 150°C 100 200 60 Qrr 500 75 12 250 70 150°C 600 50 300 Irm(A) Qrr (nC) 700 25 Temperature (°C ) Figure 21: Diode Forward voltage vs. Junction Temperature Temperature (°C ) Figure 20: Diode Reverse Leakage Current vs. Junction Temperature 100 13V 1.2 S ICE(S) (A) VCE=600V 1.E-05 200 20 160 16 70 150°C 600 60 400 40 300 30 25°C 200 20 150°C Irm 100 25°C 0 100 200 120 80 25°C S 150°C 10 0 8 Trr 40 25°C 0 300 400 500 600 700 800 900 di/dt (A/mS) Figure 24: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=10A) Rev.2.0: February 2021 12 S 50 Trr (nS) Qrr Irm(A) Qrr (nC) 150°C 500 www.aosmd.com 100 200 300 4 0 400 500 600 700 800 900 di/dt (A/mS) Figure 25: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=10A) Page 7 of 9 AOTF10B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for IGBT ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 27: Normalized Maximum Transient Thermal Impedance for Diode Rev.2.0: February 2021 www.aosmd.com Page 8 of 9 AOTF10B60D Rev.2.0: February 2021 www.aosmd.com Page 9 of 9