AOTF10B65M2

AOTF10B65M2 650V, 10A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest AlphaIGBT(αIGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 10A VCE(sat) (TJ=25°C) 1.6V Applications • Motor drives • Sewing machines • Servo and general purpose inverters • Fan, pumps, vacuum cleaner • Other hard switching applications TO-220F C G C E G E AOTF10B65M2 Orderable Part Number Package Type AOTF10B65M2 TO220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax Turn off SOA, VCE≤650V, Limited by TJmax Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤150°C Power Dissipation TC=25°C TC=100°C Junction and Storage Temperature Range IC Form Minimum Order Quantity Tube 1000 AOTF10B65M2 650 Units V ±30 V 202) 102) I CM 30 A I LM 30 A IF 202) 102) A I FM 30 A t SC 5 ms PD T J , T STG 30 12 -55 to 150 Maximum lead temperature for soldering TL 300 purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol AOTF10B65M2 R q JA Maximum Junction-to-Ambient 65 Maximum IGBT Junction-to-Case R q JC 4.2 Maximum Diode Junction-to-Case R q JC 5 1) Allowed number of short circuits: 1s. 2) TO220F IC follows TO220/TO263. Rev.2.0: February 2021 A www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 AOTF10B65M2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES I GES g FS IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=10A Collector-Emitter Saturation Voltage VGE=0V, IC=10A Diode Forward Voltage Min VCE=650V, VGE=0V Zero Gate Voltage Collector Current Gate-Emitter leakage current Forward Transconductance Max Units V 650 - - TJ=25°C - 1.6 2 TJ=125°C - 1.86 - TJ=150°C - 1.95 - TJ=25°C - 1.6 2 TJ=125°C - 1.63 - TJ=150°C - 1.62 - VCE=5V, IC=1mA Gate-Emitter Threshold Voltage Typ - 5.1 - TJ=25°C - - 10 TJ=125°C - - 500 TJ=150°C - - 1000 V V V mA VCE=0V, VGE=±30V - - ±100 VCE=20V, IC=10A - 9 - nA S - 647 - pF - 82 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 25 - pF Qg Total Gate Charge - 24 - nC Q ge Gate to Emitter Charge - 5.5 - nC Q gc Gate to Collector Charge - 12 - nC - 70 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 5.8 - W t D(on) Turn-On DelayTime - 12 - ns tr Turn-On Rise Time - 16 - ns t D(off) Turn-Off Delay Time - 91 - ns tf Turn-Off Fall Time - 14 - ns E on Turn-On Energy - 0.18 - mJ E off Turn-Off Energy - 0.13 - mJ E total t rr Total Switching Energy - 0.31 - mJ Diode Reverse Recovery Time - 262 - Q rr Diode Reverse Recovery Charge - 0.5 - ns mC I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=150°C) - 4 - A t D(on) Turn-On DelayTime - 11 - ns tr Turn-On Rise Time - 17 - ns t D(off) Turn-Off Delay Time - 108 - ns tf Turn-Off Fall Time - 23 - ns E on Turn-On Energy - 0.2 - mJ E off Turn-Off Energy - 0.21 - mJ E total t rr Total Switching Energy - 0.41 - mJ Diode Reverse Recovery Time - 261 - Q rr Diode Reverse Recovery Charge - 0.7 - ns mC I rm Diode Peak Reverse Recovery Current - 5.2 - A I C(SC) VGE=15V, VCC=520V, IC=10A VGE=15V, VCC=400V, tsc≤5us, TJ≤150°C Short circuit collector current TJ=25°C VGE=15V, VCC=400V, IC=10A, RG=30W TJ=25°C IF=10A, di/dt=200A/ms, VCC=400V TJ=150°C VGE=15V, VCC=400V, IC=10A, RG=30W TJ=150°C IF=10A, di/dt=200A/ms, VCC=400V APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev.2.0: February 2021 www.aosmd.com Page 2 of 9 AOTF10B65M2 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 20V 20V 17V 40 15V 17V 40 15V VCE IC (A) IC (A) 13V 30 11V 20 13V 30 11V 20 9V 9V 10 10 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=150°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 30 30 VCE=20V 25 25 20 20 150°C IF (A) IC (A) -40°C 15 10 25°C 15 150°C 10 25°C 5 5 -40°C 0 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 VF (V) Figure 4: Diode Characteristic 5 3 4 2.5 20A 2 IC=20A 3 VSD (V) VCE(sat) (V) VGE (V) Figure 3: Transfer Characteristic IC=10A 2 10A 1.5 5A 1 IF=1A 1 IC=5A 0.5 0 0 0 25 50 75 100 125 150 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.2.0: February 2021 www.aosmd.com 0 25 50 75 100 125 150 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 AOTF10B65M2 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=10A 12 Cies Capacitance (pF) VGE (V) 1000 9 6 3 Coes 100 Cres 10 0 1 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 8 16 24 32 40 VCE (V) Figure 8: Capacitance Characteristic 50 Power Disspation (W) 40 30 20 10 0 25 50 75 100 125 150 TCASE (°C) Figure 10: Power Disspation as a Function of Case 1E-03 20 1E-04 1E-05 12 ICE(S) (A) Current rating IC (A) 16 8 VCE=650V 1E-06 VCE=520V 1E-07 4 1E-08 0 1E-09 25 50 75 100 125 150 Rev.2.0: February 2021 0 25 50 75 100 125 150 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE (°C) Figure 11: Current De-rating www.aosmd.com Page 4 of 9 AOTF10B65M2 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 Switching Time (ns) 1000 Switching Time (ns) 10000 Td(off) Tf Td(on) Tr 100 10 100 10 1 1 5 8 11 14 17 0 20 IC (A) Figure 13: Switching Time vs. I C (Tj=150°C, VGE=15V, VCE=400V, Rg=30W) 10000 150 200 250 Rg (W) Figure 14: Switching Time vs. R g (Tj=150°C, VGE=15V, VCE=400V, IC=10A) 25 50 300 6 5 VGE(TH) (V) Switching Time (ns) 100 7 Td(off) Tf Td(on) Tr 1000 50 100 4 3 10 2 1 1 25 50 100 125 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=10A, Rg=30W) Rev.2.0: February 2021 75 150 www.aosmd.com 0 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 AOTF10B65M2 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.5 1.5 Eoff Eoff 1.2 Switching Energy (mJ) 1.2 SwitchIng Energy (mJ) Eon Eon Etotal 0.9 0.6 0.3 Etotal 0.9 0.6 0.3 0 0 5 8 11 14 17 20 0 IC (A) Figure 17: Switching Loss vs. I C (Tj=150°C, VGE=15V, VCE=400V, Rg=30W) 50 150 200 250 300 Rg (W) Figure 18: Switching Loss vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=10A) 0.5 0.5 Eoff Eoff Switching Energy (mJ) Eon 0.4 Switching Energy (mJ) 100 Etotal 0.3 0.2 0.1 Eon 0.4 Etotal 0.3 0.2 0.1 0 0 25 50 75 100 125 150 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=10A, Rg=30W) Rev.2.0: February 2021 www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=150°C, VGE=15V, IC=10A, Rg=30W) Page 6 of 9 AOTF10B65M2 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 360 150°C 800 20 600 15 30 300 25 150°C Trr 25°C Qrr 400 Trr (ns) Irm (A) Qrr (nC) 240 20 25°C 180 15 10 120 150°C 5 5 150°C 0 0 11 14 S 60 25°C 8 10 25°C Irm 200 5 S 1000 17 0 20 IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/ms) 1000 8 11 14 17 20 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/ms) 360 30 800 0 5 30 300 24 25 150°C 150°C 400 20 25°C Trr 180 15 12 Irm 200 6 25°C 0 0 200 150°C 120 150°C 60 0 300 400 500 600 700 800 di/dt (A/ms) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=10A) Rev.2.0: February 2021 www.aosmd.com 25°C S 25°C Trr (ns) 18 Qrr Irm (A) Qrr (nC) 240 600 10 S 5 0 500 600 700 800 di/dt (A/ms) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=10A) 200 300 400 Page 7 of 9 AOTF10B65M2 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=4.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 T 0.0001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 1E-06 T 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.2.0: February 2021 www.aosmd.com Page 8 of 9 AOTF10B65M2 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.2.0: February 2021 www.aosmd.com Page 9 of 9