AOTF10N50FD

AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 10A RDS(ON) (at VGS=10V) < 0.75W 100% UIS Tested 100% Rg Tested Top View TO-220F D G AOTF10N50FD G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID AOTF10N50FD 500 Units V ±30 V 10* 6* A IDM 33 Avalanche Current C IAR 3.8 A Repetitive avalanche energy C EAR 216 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS dv/dt 433 5 50 mJ V/ns W 0.4 -55 to 150 W/ oC °C 300 °C AOT10N50FD 65 2.5 Units °C/W °C/W PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.2.0: January 2021 www.aosmd.com Page 1 of 6 AOTF10N50FD Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=10mA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250mA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS ISM ID=10mA, VGS=0V, TJ=150°C 600 V ID=10mA, VGS=0V 0.56 V/ C o VDS=500V, VGS=0V 10 VDS=400V, TJ=125°C 100 ±100 mA 3.1 4.2 nA V VGS=10V, ID=5A 0.6 0.75 W VDS=40V, ID=5A 10 IS=10A,VGS=0V 0.93 2.5 S 1.6 V Maximum Body-Diode Continuous Current 10 A Maximum Body-Diode Pulsed Current 33 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 820 1030 1240 pF VGS=0V, VDS=25V, f=1MHz 75 112 150 pF 5 10 15 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.4 5.2 W 20 26 35 nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=10A Qgs Gate Source Charge 4.8 nC Qgd Gate Drain Charge 9.5 nC tD(on) Turn-On DelayTime 24 ns tr Turn-On Rise Time 65 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=250V, ID=10A, RG=25W 69 ns tf trr Turn-Off Fall Time IF=10A,dI/dt=100A/ms,VDS=100V 116 190 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/ms,VDS=100V 0.3 0.6 Body Diode Reverse Recovery Time 50 ns ns mC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using