AOTF10N60

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 10A RDS(ON) (at VGS=10V) < 0.75Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT10N60L & AOTF10N60L & AOB10N60L Top View TO-220 TO-263 D2PAK TO-220F D D G D AOT10N60 G S G AOTF10N60 D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT10N60/AOB10N60 Parameter Symbol Drain-Source Voltage VDS 600 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C S G AOB10N60 AOTF10N60 ±30 ID Units V V 10 10* 7.2 7.2* A IDM 36 Avalanche Current C IAR 4.4 A Repetitive avalanche energy C EAR 290 mJ Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS 580 45 5 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG dv/dt PD 50 W 2 0.4 -55 to 150 W/ oC °C 300 °C AOT10N60/AOB10N60 65 AOTF10N60 65 Units °C/W 0.5 0.5 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.8.0: March 2014 250 TL Symbol RθJA RθCS mJ V/ns www.aosmd.com Page 1 of 6 AOT10N60/AOB10N60/AOTF10N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V V V/ oC 0.65 VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A gFS Forward Transconductance VDS=40V, ID=5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ±100 µA 4 4.5 nΑ V 0.6 0.75 Ω 1 V Maximum Body-Diode Continuous Current 10 A Maximum Body-Diode Pulsed Current 36 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss 700 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=480V, ID=10A 3 15 S 0.73 1100 1320 1600 pF 105 130 160 pF 7.5 9.3 11 pF 3 3.8 6 Ω 31 40 nC 6 10 nC 14.4 20 nC 28 35 ns 66 80 ns 76 95 ns 64 80 ns ns µC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=10A,dI/dt=100A/µs,VDS=100V 290 350 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 3.9 4.7 Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=10A, RG=25Ω A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using