AOTF10T60L

AOT10T60/AOTF10T60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10T60 & AOTF10T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 40A RDS(ON),max < 0.7Ω Qg,typ 23nC Eoss @ 400V 3.4µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT10T60L & AOTF10T60L Top View TO-220 TO-220F D D G D AOT10T60 G S AOTF10T60 G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT10T60 Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID S AOTF10T60 600 AOTF10T60L ±30 Units V V 10 10* 10* 6.6 6.6* 6.6* A Pulsed Drain Current C IDM Avalanche Current C,J IAR 10 A Repetitive avalanche energy C,J EAR 50 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS 480 50 5 43 mJ 40 dv/dt 208 PD 1.7 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.4.0: April 2014 0.34 -55 to 150 V/ns 32 W 0.26 W/ oC °C 300 AOT10T60 65 0.5 0.6 www.aosmd.com AOTF10T60 65 -2.9 °C AOTF10T60L 65 -3.9 Units °C/W °C/W °C/W Page 1 of 7 AOT10T60/AOTF10T60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.55 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A gFS Forward Transconductance VDS=40V, ID=5A VSD Diode Forward Voltage IS=1A,VGS=0V ±100 3 µA 4 5 nΑ V 0.6 0.7 Ω 1 V 9 0.74 S IS Maximum Body-Diode Continuous Current 10 A ISM Maximum Body-Diode Pulsed Current C 40 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) 1346 pF 54 pF 40 pF 72 pF VGS=0V, VDS=100V, f=1MHz 10 pF f=1MHz 3.8 Ω VGS=10V, VDS=480V, ID=10A 6.9 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge 23 35 nC Qgd Gate Drain Charge 6.7 nC tD(on) Turn-On DelayTime 37 ns tr Turn-On Rise Time 60 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=300V, ID=10A, RG=25Ω 53 ns tf trr Turn-Off Fall Time 35 ns IF=10A,dI/dt=100A/µs,VDS=100V 477 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 6.7 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using