AOTF11C60P

AOTF11C60P 600V,11A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability VDS @ Tj,max 700V IDM 44A RDS(ON),max < 0.4Ω Qg,typ 31nC Eoss @ 400V 5.4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom D TO-220F G D S G S AOTF11C60P Orderable Part Number Package Type Form Minimum Order Quantity AOTF11C60P AOTF11C60PL TO-220F Pb Free TO-220F Green Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS TC=25°C Continuous Drain Current Avalanche Current C TC=100°C C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds ID ±30 Units V V 11* 11* 9* 9* IDM 44 IAR 11 A A EAR 60 mJ EAS 940 100 20 mJ dv/dt PD V/ns -55 to 150 W W/°C °C 300 °C 50 0.4 TJ, TSTG 37 0.3 TL Thermal Characteristics Parameter Symbol RθJA Maximum Junction-to-Ambient A,D Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.1.0: November 2014 AOTF11C60PL 600 VGS Gate-Source Voltage Pulsed Drain Current AOTF11C60P AOTF11C60P AOTF11C60PL Units 65 2.5 65 3.4 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 ID=250µA, VGS=0V 0.54 VDS=600V, VGS=0V 1 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) VGS=10V, ID=5.5A gFS Forward Transconductance VDS=40V, ID=5.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ±100 nA 5 V 0.33 0.4 Ω 1 V Maximum Body-Diode Continuous Current 11 A Maximum Body-Diode Pulsed Current C 44 A Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge 11 0.72 S 2333 pF 91 pF 63 pF 117 pF VGS=0V, VDS=100V, f=1MHz 2.4 pF f=1MHz 2.9 Ω VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 µA 4 DYNAMIC PARAMETERS Input Capacitance Ciss Co(tr) V/ oC VDS=480V, TJ=125°C Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) V 31 VGS=10V, VDS=480V, ID=11A 50 nC 12 nC Qgd Gate Drain Charge 4.3 nC tD(on) Turn-On DelayTime 55 ns tr Turn-On Rise Time 41 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=300V, ID=11A, RG=25Ω 83 ns tf trr 26 ns Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/µs,VDS=100V 470 Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 6.8 ns µC Turn-Off Fall Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using