AOTF11N60L

AOT11N60L/AOTF11N60L/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary The AOT11N60L & AOTF11N60L & AOTF11N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 11A RDS(ON) (at VGS=10V) < 0.65W 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D D D AOT11N60L G S G G AOTF11N60(L) D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT11N60L Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C S S AOTF11N60 600 AOTF11N60L ±30 11 ID 8 Units V V 11* 11* 8* 8* A Pulsed Drain Current C IDM 39 Avalanche Current C IAR 4.8 A Repetitive avalanche energy C EAR 345 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 690 5 50 mJ V/ns W 272 PD 2.2 TJ, TSTG TL 37.9 0.3 300 Symbol RqJA RqCS Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev 2.0: January 2021 0.4 -55 to 150 W/ oC °C °C AOT11N60L 65 AOTF11N60 65 AOTF11N60L 65 Units °C/W 0.5 0.46 -2.5 -3.3 °C/W °C/W www.aosmd.com Page 1 of 6 AOT11N60L/AOTF11N60/AOTF11N60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS ID=250μA, VGS=0V, TJ=150°C 700 V ID=250μA, VGS=0V 0.67 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250mA RDS(ON) Static Drain-Source On-Resistance gFS ±100 mA 3.9 4.5 nA V VGS=10V, ID=5.5A 0.56 0.65 W Forward Transconductance VDS=40V, ID=5.5A 12 VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.3 S 1 V Maximum Body-Diode Continuous Current 11 A Maximum Body-Diode Pulsed Current 39 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd 0.73 1320 1656 1990 pF 100 146 195 pF 6.5 11.2 16 pF 1.7 3.5 5.3 W 24 30.6 37 nC VGS=10V, VDS=480V, ID=11A 9.6 nC Gate Drain Charge 9.6 nC tD(on) Turn-On DelayTime 39 ns tr Turn-On Rise Time 58 ns tD(off) Turn-Off DelayTime 92 ns tf trr Turn-Off Fall Time IF=11A,dI/dt=100A/ms,VDS=100V 400 500 600 Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/ms,VDS=100V 4.7 5.9 7.1 Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=11A, RG=25W 42 ns ns mC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using