AOTF11N62

AOTF11N62 620V,11A N-Channel MOSFET General Description Product Summary The AOTF11N62 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 720V@150℃ 11A RDS(ON) (at VGS=10V) < 0.65Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF11N62L Top View D TO-220F G AOTF11N62 D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOTF11N62 Parameter Symbol Drain-Source Voltage VDS 620 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C AOTF11N62L ±30 11* ID Units V V 11* 8* 8* A IDM 39 Avalanche Current C IAR 4.8 A Repetitive avalanche energy C EAR 345 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 690 5 mJ V/ns W PD TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev 1: July 2012 50 39 0.4 0.3 -55 to 150 W/ oC °C 300 °C AOTF11N62 65 2.5 www.aosmd.com AOTF11N62L 65 3.2 Units °C/W °C/W Page 1 of 6 AOTF11N62 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 620 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 720 V ID=250µA, VGS=0V 0.67 V/ oC VDS=620V, VGS=0V 1 VDS=500V, TJ=125°C 10 ±100 3.3 µA 3.9 4.5 nΑ V 0.65 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A 0.56 gFS Forward Transconductance VDS=40V, ID=5.5A 12 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 11 A ISM Maximum Body-Diode Pulsed Current 39 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg S 0.73 1320 1656 1990 pF 100 146 195 pF 6.5 11.2 16 pF 1.7 3.5 5.3 Ω 24 30.6 37 VGS=10V, VDS=480V, ID=11A Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=11A,dI/dt=100A/µs,VDS=100V 400 500 600 Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 4.7 5.9 7.1 nC 9.6 nC Gate Drain Charge 9.6 nC Turn-On DelayTime 39 ns 58 ns Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=11A, RG=25Ω 92 ns 42 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using