AOTF12N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 12A RDS(ON) (at VGS=10V) < 0.52W 100% UIS Tested 100% Rg Tested Top View TO-220 D TO-263 D2PAK TO-220F D G G AOT12N50 D S G AOTF12N50 D AOB12N50 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N50/AOB12N50 Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D AOTF12N50 Units V V 12* 8.4 8.4* A IDM 48 IAR 5.5 A EAR 454 mJ EAS 908 40 5 mJ dv/dt PD 50 W 2 0.4 -55 to 150 W/ oC °C 300 °C TL Symbol RqJA RqCS V/ns 250 TJ, TSTG AOT12N50/AOB12N50 65 AOTF12N50 65 Units °C/W 0.5 0.5 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.9.0: January 2021 G ±30 12 ID S S S www.aosmd.com Page 1 of 6 AOT12N50/AOB12N50/AOTF12N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) VDS=5V ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ID=250μA, VGS=0V, TJ=150°C 600 V ID=250μA, VGS=0V 0.54 V/ C o VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 ±100 mA 3.9 4.5 nA V VGS=10V, ID=6A 0.36 0.52 W VDS=40V, ID=6A 16 3.3 S 1 V Maximum Body-Diode Continuous Current 12 A Maximum Body-Diode Pulsed Current 48 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=12A 0.72 1089 1361 1633 pF 134 167 200 pF 10 12.6 15 pF 1.8 3.6 5.4 W 30.7 37 nC 7.6 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge 13.0 16 nC tD(on) Turn-On DelayTime 29 35 ns tr Turn-On Rise Time 69 83 ns tD(off) Turn-Off DelayTime 82 98 ns tf trr Turn-Off Fall Time 55.5 67 ns IF=12A,dI/dt=100A/ms,VDS=100V 231 277 Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/ms,VDS=100V 2.82 3.4 ns mC Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=12A, RG=25W A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using