AOTF12T50P

AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 600V IDM 48A RDS(ON),max < 0.5Ω Qg,typ 22nC Eoss @ 400V 4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom TO-220F D G D S G S AOTF12T50P Orderable Part Number Package Type Form Minimum Order Quantity AOTF12T50P AOTF12T50PL TO-220F Pb Free TO-220F Green Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C AOTF12T50P L=1mH 500 AOTF12T50PL Units V ±30 V 12* ID A 8* IDM 48 IAR 12 A Repetitive avalanche energy C EAR 72 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 480 50 5 mJ dv/dt PD Rev.2.0: September 2014 43 33 0.3 0.26 TJ, TSTG W -55 to 150 °C 300 °C TL Thermal Characteristics Parameter Symbol RθJA Maximum Junction-to-Ambient A,D Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. V/ns AOTF12T50P AOTF12T50PL Units 65 2.9 65 3.8 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 600 ID=250µA, VGS=0V 0.47 VDS=500V, VGS=0V 1 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) VGS=10V, ID=6A gFS Forward Transconductance VDS=40V, ID=6A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ±100 nA 5 V 0.39 0.5 Ω 1 V Maximum Body-Diode Continuous Current 12 A Maximum Body-Diode Pulsed Current C 48 A Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=100V, f=1MHz Gate Source Charge 10 0.74 S 1477 pF 63 pF 50 pF 90 pF 6.3 pF 2 Ω VGS=0V, VDS=0 to 400V, f=1MHz VGS=0V, VDS=100V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 µA 4 DYNAMIC PARAMETERS Input Capacitance Ciss Co(tr) V/ oC VDS=400V, TJ=125°C Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) V 22 VGS=10V, VDS=400V, ID=12A 32 nC 8 nC Qgd Gate Drain Charge 5.5 nC tD(on) Turn-On DelayTime 37 ns tr Turn-On Rise Time 54 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=250V, ID=12A, RG=25Ω 46 ns tf trr 28 ns Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V 428 Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 6.1 ns µC Turn-Off Fall Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using