AOTF15B65M3

AOTF15B65M3 650V, 15A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest AlphaIGBT(αIGBT) technology • 650V Breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 15A VCE(sat) (TJ=25°C) 1.95V Applications • Motor drives • Sewing machines • Home appliances • Fan, pumps, vacuum cleaner • Other hard switching applications TO-220F C G C E G E AOTF15B65M3 Orderable Part Number Package Type AOTF15B65M3 TO220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage VCE Gate-Emitter Voltage VGE Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax Turn off SOA, VCE≤650V, Limited by TJmax Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤150°C Power Dissipation TC=25°C TC=100°C Junction and Storage Temperature Range IC Form Minimum Order Quantity Tube 1000 AOTF15B65M3 650 Units V ±30 V 30(2) 15(2) ICM 45 A ILM 45 A IF 20(2) 10(2) A IFM 30 A tSC 5 ms PD TJ, TSTG 30 12 -55 to 150 Maximum lead temperature for soldering 300 TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol AOTF15B65M3 RqJA Maximum Junction-to-Ambient 65 Maximum IGBT Junction-to-Case RqJC 4.2 Maximum Diode Junction-to-Case RqJC 7 1) Allowed number of short circuits: 1s. 2) TO220F IC follows TO220/TO263. Rev.2.0: February 2021 A www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 AOTF15B65M3 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVCES Collector-Emitter Breakdown Voltage VCE(sat) IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=15A Collector-Emitter Saturation Voltage VF Diode Forward Voltage VGE=0V, IF=10A VGE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA ICES IGES gFS VCE=650V, VGE=0V Zero Gate Voltage Collector Current Gate-Emitter leakage current Forward Transconductance Min Typ Max Units V 650 - - TJ=25°C - 1.95 2.5 TJ=125°C - 2.46 - TJ=150°C - 2.61 - TJ=25°C - 1.9 2.4 TJ=125°C - 1.96 - TJ=150°C - 1.95 - - 5.1 - TJ=25°C - - 10 TJ=125°C - - 100 TJ=150°C - - 500 V V V mA VCE=0V, VGE=±30V - - ±100 VCE=20V, IC=15A - 9 - nA S - 655 - pF - 68 - pF DYNAMIC PARAMETERS Cies Input Capacitance VGE=0V, VCC=25V, f=1MHz Coes Output Capacitance Cres Reverse Transfer Capacitance - 25 - pF Qg Total Gate Charge - 25.4 - nC Qge Gate to Emitter Charge - 7.5 - nC Qgc Gate to Collector Charge - 11 - nC - 70 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 5.8 - W tD(on) Turn-On DelayTime - 10 - ns tr Turn-On Rise Time - 17 - ns tD(off) Turn-Off Delay Time - 68 - ns tf Turn-Off Fall Time - 16 - ns Eon Turn-On Energy - 0.28 - mJ Eoff Turn-Off Energy - 0.19 - mJ Etotal trr Total Switching Energy - 0.47 - mJ - 263 - Qrr Diode Reverse Recovery Charge - 0.4 - ns mC Irm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=150°C) - 3.8 - A tD(on) Turn-On DelayTime - 9 - ns tr Turn-On Rise Time - 18 - ns tD(off) Turn-Off Delay Time - 80 - ns tf Turn-Off Fall Time - 28 - ns Eon Turn-On Energy - 0.3 - mJ Eoff Turn-Off Energy - 0.31 - mJ Etotal trr Total Switching Energy - 0.61 - mJ - 262 - Qrr Diode Reverse Recovery Charge - 0.6 - ns mC Irm Diode Peak Reverse Recovery Current - 4.5 - A IC(SC) VGE=15V, VCC=520V, IC=15A VGE=15V, VCC=400V, tsc≤5us, TJ≤150°C Short circuit collector current TJ=25°C VGE=15V, VCC=400V, IC=15A, RG=20W Diode Reverse Recovery Time TJ=25°C IF=10A, di/dt=200A/ms, VCC=400V TJ=150°C VGE=15V, VCC=400V, IC=15A, RG=20W Diode Reverse Recovery Time TJ=150°C IF=10A, di/dt=200A/ms, VCC=400V APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev.2.0: February 2021 www.aosmd.com Page 2 of 9 AOTF15B65M3 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 20V 20V 17V 40 15V 17V 40 15V 30 IC (A) IC (A) 13V 11V 20 13V 30 11V 20 9V 9V 10 10 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=150°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 30 30 VCE=20V 25 25 20 150°C IF (A) IC (A) 20 -40°C 15 10 25°C 15 150°C 10 25°C 5 5 -40°C 0 0 3 6 9 12 15 0 1 VGE (V) Figure 3: Transfer Characteristic 3 4 5 VF (V) Figure 4: Diode Characteristic 7 3 6 20A 2.5 5 IC=30A 2 VSD (V) VCE(sat) (V) 2 4 3 10A 1.5 5A IC=15A 1 2 IF=1A 1 0.5 IC=7.5A 0 0 0 25 50 75 100 125 150 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.2.0: February 2021 www.aosmd.com 0 25 50 75 100 125 150 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 AOTF15B65M3 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=15A Capacitance (pF) VGE (V) 12 9 6 1000 Cies 100 Coes 10 Cres 3 0 1 0 5 10 15 20 25 30 0 8 Qg (nC) Figure 7: Gate-Charge Characteristics 16 24 32 40 VCE (V) Figure 8: Capacitance Characteristic 50 Power Disspation (W) 40 30 20 10 0 25 50 75 100 125 150 TCASE (°C) Figure 10: Power Disspation as a Function of Case 1E-03 16 1E-05 ICE(S) (A) Current rating IC (A) 1E-04 12 8 VCE=650V 1E-06 1E-07 VCE=520V 4 1E-08 0 1E-09 25 50 75 100 125 150 Rev.2.0: February 2021 0 25 50 75 100 125 150 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE (°C) Figure 11: Current De-rating www.aosmd.com Page 4 of 9 AOTF15B65M3 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Switching Time (ns) 1000 Switching Time (ns) 10000 Td(off) Tf Td(on) Tr 100 10 Td(off) Tf Td(on) Tr 1000 100 10 1 1 5 10 15 20 25 30 0 IC (A) Figure 13: Switching Time vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=20W) 120 160 200 7 Td(off) Tf Td(on) Tr 1000 80 Rg (W) Figure 14: Switching Time vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=15A) 6 5 VGE(TH) (V) Switching Time (ns) 10000 40 100 4 3 10 2 1 1 25 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=15A, Rg=20W) Rev.2.0: February 2021 www.aosmd.com 0 25 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 AOTF15B65M3 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.8 1.8 Eoff Eoff Eon Eon 1.5 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) 1.5 1.2 0.9 0.6 0.3 Etotal 1.2 0.9 0.6 0.3 0 0 5 10 15 20 25 30 0 0.8 80 120 160 200 0.8 0.6 Eoff Eoff Eon Eon Switching Energy (mJ) Switching Energy (mJ) 40 Rg (W) Figure 18: Switching Loss vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=15A) IC (A) Figure 17: Switching Loss vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=20W) Etotal 0.4 0.2 Etotal 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=15A, Rg=20W) Rev.2.0: February 2021 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=150°C, VGE=15V, IC=15A, Rg=20W) 500 Page 6 of 9 AOTF15B65M3 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 800 360 300 20 150°C 30 25 150°C Trr 25°C Qrr 400 Trr (ns) 15 Irm (A) Qrr (nC) 240 600 20 25°C 180 15 10 120 200 5 5 150°C 0 0 11 14 S 60 25°C 8 10 25°C Irm 150°C 5 S 1000 17 0 0 20 5 IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/ms) 1000 11 14 17 20 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/ms) 360 25 800 8 30 300 20 25 150°C 150°C 25°C 400 20 Trr 25°C 180 15 10 200 150°C 120 150°C Irm 5 60 25°C 25°C 0 0 100 200 300 400 500 600 di/dt (A/ms) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=10A) Rev.2.0: February 2021 0 10 S 5 0 400 500 600 di/dt (A/ms) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=10A) 100 www.aosmd.com S Qrr Trr (ns) 15 Irm (A) Qrr (nC) 240 600 200 300 Page 7 of 9 AOTF15B65M3 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=4.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 T 0.0001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=7°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 1E-06 T 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.2.0: February 2021 www.aosmd.com Page 8 of 9 AOTF15B65M3 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.2.0: February 2021 www.aosmd.com Page 9 of 9