AOT15S65L/AOB15S65L/AOTF15S65L/AOTF15S65
650V 15A a MOS TM Power Transistor
General Description
Product Summary
The AOT15S65L & AOB15S65L & AOTF15S65L &
AOTF15S65 have been fabricated using the advanced
aMOSTM high voltage process that is designed to deliver high
levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with guaranteed
avalanche capability these parts can be adopted quickly into
new and existing offline power supply designs.
VDS @ Tj,max
750V
IDM
60A
RDS(ON),max
0.29W
Qg,typ
17.2nC
Eoss @ 400V
3.6mJ
100% UIS Tested
100% Rg Tested
Top View
TO-263
D2PAK
TO-220F
TO-220
D
D
D
G
D
S
AOT15S65L
G
D
S
G
S
S
G
AOTF15S65(L)
AOB15S65L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
AOT15S65L/AOB15S65L
TC=100°C
C
ID
AOTF15S65
650
AOTF15S65L
±30
15
10
Units
V
V
15*
15*
10*
10*
A
IDM
60
Avalanche Current C
IAR
2.4
A
Repetitive avalanche energy C
EAR
86
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B
Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
EAS
PD
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Symbol
RqJA
RqCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
Rev3.0: January 2021
1.7
dv/dt
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
A,D
173
50
34
mJ
W
0.4
100
20
-55 to 150
0.3
W/ oC
208
V/ns
°C
300
°C
AOT15S65L/AOB15S65L
AOTF15S65
AOTF15S65L
Units
65
65
65
°C/W
0.5
0.6
-2.5
-3.7
°C/W
°C/W
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Page 1 of 7
AOT15S65L/AOB15S65L/AOTF15S65(L)
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
Units
650
-
-
700
750
-
V
VDS=650V, VGS=0V
-
-
1
VDS=520V, TJ=150°C
-
10
-
mA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250mA
2.6
3.3
4
nA
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=7.5A, TJ=25°C
-
0.254
0.29
W
VGS=10V, ID=7.5A, TJ=150°C
-
0.68
0.78
W
VSD
Diode Forward Voltage
IS=7.5A,VGS=0V, TJ=25°C
-
0.82
-
V
IS
Maximum Body-Diode Continuous Current
-
-
15
A
ISM
Maximum Body-Diode Pulsed Current
-
-
60
A
-
841
-
pF
-
58
-
pF
-
40
-
pF
-
150
-
pF
VGS=0V, VDS=100V, f=1MHz
-
1.1
-
pF
VGS=0V, VDS=0V, f=1MHz
-
14
-
W
-
17.2
-
nC
-
4.3
-
nC
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
H
related
Co(tr)
Crss
Rg
Effective output capacitance, time
I
related
Reverse Transfer Capacitance
Gate resistance
C
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=480V, ID=7.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
5.6
-
nC
tD(on)
Turn-On DelayTime
-
27
-
ns
tr
Turn-On Rise Time
-
24
-
ns
tD(off)
Turn-Off DelayTime
-
90
-
ns
tf
trr
Turn-Off Fall Time
-
23
-
ns
IF=7.5A,dI/dt=100A/ms,VDS=400V
VGS=10V, VDS=400V, ID=7.5A,
RG=25W
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
-
320
-
ns
Irm
IF=7.5A,dI/dt=100A/ms,VDS=400V
-
27
-
Qrr
Body Diode Reverse Recovery Charge IF=7.5A,dI/dt=100A/ms,VDS=400V
-
5.5
-
A
mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
