AOTF18N65

AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 750V@150℃ 18A RDS(ON) (at VGS=10V) < 0.39Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF18N65L Top View D TO-220F G AOTF18N65 G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOTF18N65 650 Units V ±30 V 18* 12* A Pulsed Drain Current C IDM Avalanche Current C IAR 6.3 A Repetitive avalanche energy C EAR 595 mJ 1190 5 50 mJ V/ns W 0.4 -55 to 150 W/ oC °C 300 °C AOTF18N65 65 2.5 Units °C/W °C/W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev0: Jul 2011 www.aosmd.com 80 Page 1 of 5 AOTF18N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 750 ID=250µA, VGS=0V 0.7 V V/ oC VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 2.9 µA 3.5 4.5 nΑ V 0.39 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=9A 0.32 gFS Forward Transconductance VDS=40V, ID=9A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current* 18 A ISM Maximum Body-Diode Pulsed Current 80 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2270 3027 3785 pF VGS=0V, VDS=25V, f=1MHz 170 271 370 pF 12 22 32 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=520V, ID=18A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=18A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time S 0.69 44 56 68 nC 9 12.4 15 nC 9 19.6 30 nC VGS=10V, VDS=325V, ID=18A, RG=25Ω 54 ns 83 ns 149 ns 71 IF=18A,dI/dt=100A/µs,VDS=100V ns 520 655 790 8 10 12 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using