AOTF190A60L

AOTF190A60L 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max 700V IDM 80A RDS(ON),max < 0.19Ω Qg,typ 34nC Eoss @ 400V 4.3mJ Applications 100% UIS Tested 100% Rg Tested • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Telecom D TO-220F G AOTF190A60L G D S S Orderable Part Number Package Type Form Minimum Order Quantity AOTF190A60L TO-220F Green Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C AOTF190A60L 600 Units V VGS ±20 V VGS ±30 V 20* ID 12* IDM A 80 Avalanche Current C IAR 5 A Repetitive avalanche energy C EAR 12.5 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 410 100 20 32 0.25 -55 to 150 mJ W W/°C °C 300 °C AOTF190A60L Units 65 3.9 °C/W °C/W dv/dt PD TJ, TSTG TL Thermal Characteristics Parameter Symbol RqJA Maximum Junction-to-Ambient A,D Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.4.1: June 2018 www.aosmd.com V/ns Page 1 of 6 AOTF190A60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250μA, VGS=0V, TJ=25°C 600 - 700 - ID=250μA, VGS=0V, TJ=150°C ID=250μA, VGS=0V - 0.59 - V/ C VDS=600V, VGS=0V - - 1 VDS=480V, TJ=125°C - - 10 mA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V 4 nA VDS=5V, ID=250mA 3.2 ±100 4.6 V RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VGS=10V, ID=7.6A - 0.17 0.19 Ω gFS Forward Transconductance VDS=10V, ID=10A - 16 S VSD Diode Forward Voltage IS=10A,VGS=0V - 0.85 1.2 IS Maximum Body-Diode Continuous Current - - 20 A ISM Maximum Body-Diode Pulsed Current C - - 80 A - 1935 - pF - 55 - pF - 49 - pF - 213 - pF VGS=0V, VDS=100V, f=1MHz - 1.25 - pF f=1MHz - 5 - Ω - 34 - nC - 12 - nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz V - o V VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=10A Qgs Gate Source Charge Qgd Gate Drain Charge - 11 - nC tD(on) Turn-On DelayTime - 49 - ns tr Turn-On Rise Time - 40 - ns tD(off) Turn-Off DelayTime - 115 - ns tf trr Turn-Off Fall Time - 26 - ns - 341 - ns Irm Peak Reverse Recovery Current - 28 - Qrr Body Diode Reverse Recovery Charge - 6.8 - A mC VGS=10V, VDS=400V, ID=10A, RG=25W Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/ms, VDS=400V A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using