AOTF20B65LN2

AOTF20B65LN2 650V, 20A AlphaIGBT TM With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary • Latest AlphaIGBT (αIGBT) technology • 650V breakdown voltage • Very low VCE(sat) • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low Turn-Off switching loss and softness • Very good EMI behavior VCE IC (TC=100°C) 650V 20A VCE(sat) (TJ=25°C) 1.54V Applications • Motor drives • Power tools and sewing machines • Mid to high range switching frequency converters • Other hard switching applications TO-220F C G C E G E AOTF20B65LN2 Orderable Part Number Package Type AOTF20B65LN2 TO220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage VCE Gate-Emitter Voltage VGE Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax Turn off SOA, VCE≤650V, Limited by TJmax Continuous Diode Forward Current TC=25°C TC=100°C IC Form Minimum Order Quantity Tube 1000 AOTF20B65LN2 650 Units V ±30 V 40(2) 20(2) A ICM 60 A ILM 60 A IF 40(2) 20(2) A Diode Pulsed Current, Limited by TJmax Short Circuit Withstanding Time (1) VGE=15V, VCC≤400V, TJ≤150°C TC=25°C Power Dissipation TC=100°C IFM 60 A tSC 5 ms Junction and Storage Temperature Range TJ, TSTG PD 45 18 -55 to 150 Maximum lead temperature for soldering 300 TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol AOTF20B65LN2 RqJA Maximum Junction-to-Ambient 65 Maximum IGBT Junction-to-Case RqJC 2.8 Maximum Diode Junction-to-Case RqJC 3.2 (1) Allowed number of short circuits: 1s. (2) TO220F IC follows TO220/TO263. Rev.3.0: January 2021 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 AOTF20B65LN2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVCES Collector-Emitter Breakdown Voltage VCE(sat) VF VGE(th) Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=20A Collector-Emitter Saturation Voltage VGE=0V, IF=20A Diode Forward Voltage Max Units V 650 - - TJ=25°C - 1.54 1.95 TJ=125°C - 1.83 - TJ=150°C - 1.91 - TJ=25°C - 1.6 2.1 TJ=125°C - 1.66 - TJ=150°C - 1.63 - VCE=5V, IC=1mA Gate-Emitter Threshold Voltage Typ - 4.7 - TJ=25°C - - 10 TJ=125°C - - 500 TJ=150°C V V V mA ICES Zero Gate Voltage Collector Current VCE=650V, VGE=0V - - 1000 IGES Gate-Emitter leakage current Forward Transconductance VCE=0V, VGE=±30V - - ±100 nA VCE=20V, IC=20A - 19 - S - 1237 - pF - 124 - pF gFS DYNAMIC PARAMETERS Cies Input Capacitance VGE=0V, VCC=25V, f=1MHz Coes Output Capacitance Cres Reverse Transfer Capacitance - 38 - pF Qg Total Gate Charge - 52 - nC Qge Gate to Emitter Charge - 14 - nC Qgc Gate to Collector Charge - 22 - nC - 150 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 11 - W Td(on) Turn-On DelayTime - 23 - ns Tr Turn-On Rise Time - 23 - ns Td(off) Turn-Off Delay Time - 135 - ns Tf Turn-Off Fall Time - 12 - ns Eon Turn-On Energy - 0.45 - mJ Eoff Turn-Off Energy - 0.26 - mJ Etotal Trr Total Switching Energy - 0.71 - mJ - 266 - Qrr Diode Reverse Recovery Charge - 0.6 - ns mC Irm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=150°C) - 5.4 - A Td(on) Turn-On DelayTime - 22 - ns Tr Turn-On Rise Time - 24 - ns Td(off) Turn-Off Delay Time - 160 - ns Tf Turn-Off Fall Time - 20 - ns Eon Turn-On Energy - 0.49 - mJ Eoff Turn-Off Energy - 0.44 - mJ Etotal Trr Total Switching Energy - 0.93 - mJ - 363 - Qrr Diode Reverse Recovery Charge - 1.3 - ns mC Irm Diode Peak Reverse Recovery Current - 6.9 - A IC(SC) VGE=15V, VCC=520V, IC=20A VGE=15V, VCC=400V, tsc≤5us, TJ≤150°C Short Circuit Collector Current TJ=25°C VGE=15V, VCC=400V, IC=20A, RG=15W Diode Reverse Recovery Time TJ=25°C IF=20A, dI/dt=200A/ms, VCC=400V TJ=150°C VGE=15V, VCC=400V, IC=20A, RG=15W Diode Reverse Recovery Time TJ=150°C IF=20A, dI/dt=200A/ms, VCC=400V APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev.3.0: January 2021 www.aosmd.com Page 2 of 9 AOTF20B65LN2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 20V 100 20V 17V 17V 80 15V 11V IC (A) IC (A) 15V 13V 80 60 11V 9V 20 VGE= 7V 20 60 40 9V 40 13V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=150°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 60 60 VCE=20V 50 50 -40°C 40 150°C IF (A) IC (A) 40 30 25°C 30 150°C 20 20 25°C -40°C 10 10 0 0 3 6 9 12 15 0 0.5 VGE (V) Figure 3: Transfer Characteristic 1 1.5 2 2.5 3 VF (V) Figure 4: Diode Characteristic 4 3 2.5 3.2 40A IC=40A 2.4 VF (V) VCE(sat) (V) 2 IC=20A 20A 1.5 5A 1.6 1 IC=10A 0.8 IF=1A 0.5 0 0 0 25 50 75 100 125 150 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.3.0: January 2021 www.aosmd.com 0 25 50 75 100 125 150 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 AOTF20B65LN2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=20A Cies 12 Capacitance (pF) VGE (V) 1000 9 6 Coes 100 Cres 10 3 0 1 0 15 30 45 60 75 0 Qg (nC) Figure 7: Gate-Charge Characteristics 8 16 24 32 40 VCE (V) Figure 8: Capacitance Characteristic 50 Power Disspation (W) 40 30 20 10 0 25 50 75 100 125 150 TCASE (°C) Figure 10: Power Disspation as a Function of Case 20 1E-02 1E-03 1E-04 12 ICE(S) (A) Current rating IC (A) 16 8 VCE=650V 1E-05 1E-06 VCE=520V 4 1E-07 0 1E-08 25 50 75 100 125 150 Rev.3.0: January 2021 0 25 50 75 100 125 150 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE (°C) Figure 11: Current De-rating www.aosmd.com Page 4 of 9 AOTF20B65LN2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 Switching Time (ns) Switching Time (ns) 10000 100 10 1000 100 10 1 1 10 15 20 25 30 35 IC (A) Figure 13: Switching Time vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=15W) 10000 0 40 1000 30 60 90 120 Rg (W) Figure 14: Switching Time vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=20A) 150 7 Td(off) Tf Td(on) Tr 6 5 VGE(TH) (V) Switching Time (ns) Td(off) Tf Td(on) Tr 100 4 3 10 2 1 1 25 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=20A, Rg=15W) Rev.3.0: January 2021 www.aosmd.com 0 25 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 AOTF20B65LN2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 3 Eoff Eon 2.5 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) Eoff Eon 2.5 2 1.5 1 Etotal 2 1.5 1 0.5 0.5 0 0 10 15 20 25 30 35 IC (A) Figure 17: Switching Loss vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=15W) 0 40 30 90 120 150 Rg (W) Figure 18: Switching Loss vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=20A) 1.5 1.5 Eoff Eoff Eon Eon 1.2 1.2 Etotal Switching Energy (mJ) Switching Energy (mJ) 60 0.9 0.6 0.3 Etotal 0.9 0.6 0.3 0 0 25 50 100 125 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=20A, Rg=15W) Rev.3.0: January 2021 75 150 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=150°C, VGE=15V, IC=20A, Rg=15W) 500 Page 6 of 9 AOTF20B65LN2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 1600 40 450 32 360 24 270 20 16 150°C 800 25°C Qrr 16 25°C 180 8 150°C 150°C 400 25°C 8 90 0 15 20 2000 150°C S 0 25 30 35 40 IF(A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/ms) 1600 4 25°C Irm 0 10 12 Trr S Trr (ns) 1200 Irm (A) Qr (nC) 150°C 0 10 40 500 32 400 15 20 25 30 35 40 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/ms) 20 16 Qrr 25°C 800 400 Irm Trr 300 12 S 24 Trr (nS) 1200 Irm (A) Qrr (nC) 150°C 25°C 16 200 8 100 8 4 25°C 150°C 25°C S 150°C 0 0 100 0 200 300 400 500 600 di/dt (A/ms) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=20A) Rev.3.0: January 2021 www.aosmd.com 0 100 200 300 400 500 600 di/dt (A/ms) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=20A) Page 7 of 9 AOTF20B65LN2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=2.8°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 T 0.0001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=3.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 1E-06 T 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.3.0: January 2021 www.aosmd.com Page 8 of 9 AOTF20B65LN2 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.3.0: January 2021 www.aosmd.com Page 9 of 9