AOTF20B65M2

AOTF20B65M2 650V, 20A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest AlphaIGBT (αIGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 20A VCE(sat) (TJ=25°C) 1.7V Applications • Motor Drives • Sewing Machines • Servo and General Purpose Inverters. • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-220F C G C E G E AOTF20B65M2 Orderable Part Number Package Type AOTF20B65M2 TO220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax Turn off SOA, VCE≤650V, Limited by TJmax Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤150°C Power Dissipation TC=25°C TC=100°C Junction and Storage Temperature Range IC Form Minimum Order Quantity Tube 1000 AOTF20B65M2 650 Units V ±30 V 402) 202) I CM 60 A I LM 60 A IF 402) 202) A I FM 60 A t SC 5 ms PD T J , T STG 45 18 -55 to 150 Maximum lead temperature for soldering TL 300 purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol AOTF20B65M2 R q JA Maximum Junction-to-Ambient 65 Maximum IGBT Junction-to-Case R q JC 2.8 Maximum Diode Junction-to-Case R q JC 3.2 1) Allowed number of short circuits: 1s. 2) TO220F IC follows TO220/TO263. Rev.2.0: January 2021 A www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 AOTF20B65M2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=20A Collector-Emitter Saturation Voltage VGE=0V, IC=20A Diode Forward Voltage Max Units V 650 - - TJ=25°C - 1.7 2.15 TJ=125°C - 2.02 - TJ=150°C - 2.11 - TJ=25°C - 1.56 2 TJ=125°C - 1.65 - TJ=150°C - 1.63 - VCE=5V, IC=1mA Gate-Emitter Threshold Voltage Typ - 5.1 - TJ=25°C - - 10 TJ=125°C - - 500 TJ=150°C V V V mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V - - 1000 I GES Gate-Emitter leakage current Forward Transconductance VCE=0V, VGE=±30V - - ±100 nA VCE=20V, IC=20A - 14 - S - 1216 - pF - 156 - pF g FS DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 50 - pF Qg Total Gate Charge - 46 - nC Q ge Gate to Emitter Charge - 12 - nC Q gc Gate to Collector Charge - 21 - nC - 115 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 13 - W t D(on) Turn-On DelayTime - 26 - ns tr Turn-On Rise Time - 32 - ns t D(off) Turn-Off Delay Time - 123 - ns tf Turn-Off Fall Time - 14 - ns E on Turn-On Energy - 0.58 - mJ E off Turn-Off Energy - 0.28 - mJ E total t rr Total Switching Energy - 0.86 - mJ - 292 - Q rr Diode Reverse Recovery Charge - 0.8 - ns mC I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=150°C) - 5.6 - A t D(on) Turn-On DelayTime - 25 - ns tr Turn-On Rise Time - 34 - ns t D(off) Turn-Off Delay Time - 146 - ns tf Turn-Off Fall Time - 22 - ns E on Turn-On Energy - 0.64 - mJ E off Turn-Off Energy - 0.44 - mJ E total t rr Total Switching Energy - 1.08 - mJ - 432 - Q rr Diode Reverse Recovery Charge - 1.5 - ns mC I rm Diode Peak Reverse Recovery Current - 7.2 - A I C(SC) VGE=15V, VCC=520V, IC=20A VGE=15V, VCC=400V, tsc≤5us, TJ≤150°C Short circuit collector current TJ=25°C VGE=15V, VCC=400V, IC=20A, RG=15W Diode Reverse Recovery Time TJ=25°C IF=20A, di/dt=200A/ms, VCC=400V TJ=150°C VGE=15V, VCC=400V, IC=20A, RG=15W Diode Reverse Recovery Time TJ=150°C IF=20A, di/dt=200A/ms, VCC=400V APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev.2.0: January 2021 www.aosmd.com Page 2 of 9 AOTF20B65M2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 75 20V 20V 17V 75 15V 60 13V 17V 60 45 IC (A) IC (A) 15V 13V 11V 45 11V 30 9V 30 9V 15 15 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=150°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 50 60 VCE=20V 50 40 -40°C 40 30 IF (A) IC (A) 150°C 25°C 30 20 150°C 20 25°C 10 -40°C 10 0 0 3 6 9 12 15 0 0.5 VGE (V) Figure 3: Transfer Characteristic 1 1.5 2 2.5 3 VF (V) Figure 4: Diode Characteristic 5 3 2.5 4 40A IC=40A 3 VSD (V) VCE(sat) (V) 2 IC=20A 2 20A 1.5 5A 1 1 IC=10A IF=1A 0.5 0 0 0 25 50 75 100 125 150 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.2.0: January 2021 www.aosmd.com 0 25 50 75 100 125 150 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 AOTF20B65M2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=20A Cies 12 Capacitance (pF) VGE (V) 1000 9 6 Coes 100 Cres 10 3 0 1 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 8 16 24 32 40 VCE (V) Figure 8: Capacitance Characteristic 50 Power Disspation (W) 40 30 20 10 0 25 50 75 100 125 150 TCASE (°C) Figure 10: Power Disspation as a Function of Case 20 1E-02 1E-03 1E-04 12 ICE(S) (A) Current rating IC (A) 16 8 VCE=650V 1E-05 1E-06 VCE=520V 4 1E-07 0 1E-08 25 50 75 100 125 150 Rev.2.0: January 2021 0 25 50 75 100 125 150 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE (°C) Figure 11: Current De-rating www.aosmd.com Page 4 of 9 AOTF20B65M2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 100 10 100 10 1 1 10 15 20 25 30 35 IC (A) Figure 13: Switching Time vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=15W) 10000 0 40 1000 30 60 90 120 Rg (W) Figure 14: Switching Time vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=20A) 150 7 Td(off) Tf Td(on) Tr 6 5 VGE(TH) (V) Switching Time (ns) Td(off) Tf Td(on) Tr 1000 Switching Time (ns) 1000 Switching Time (ns) 10000 Td(off) Tf Td(on) Tr 100 4 3 10 2 1 1 25 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=20A, Rg=15W) Rev.2.0: January 2021 www.aosmd.com 0 25 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 AOTF20B65M2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 3 Eoff Eon 2.5 Eon 2.5 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) Eoff 2 1.5 1 Etotal 2 1.5 1 0.5 0.5 0 0 10 15 20 25 30 35 IC (A) Figure 17: Switching Loss vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=15W) 0 40 30 90 120 150 Rg (W) Figure 18: Switching Loss vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=20A) 1.5 1.5 Eoff Eoff Eon Eon 1.2 1.2 Etotal Switching Energy (mJ) Switching Energy (mJ) 60 0.9 0.6 0.3 Etotal 0.9 0.6 0.3 0 0 25 50 100 125 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=20A, Rg=15W) Rev.2.0: January 2021 75 150 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=150°C, VGE=15V, IC=20A, Rg=15W) 500 Page 6 of 9 AOTF20B65M2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 40 600 2000 32 480 24 360 30 25 150°C 150°C 1000 25°C Qrr 16 25°C Trr 15 S Trr (ns) Irm (A) Qrr (nC) 20 1500 240 10 150°C 150°C 8 0 0 15 0 0 20 25 30 35 40 IF(A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/ms) 2000 1600 10 40 600 32 480 24 360 15 25 30 35 40 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/ms) 25 25°C 800 16 Trr (ns) 150°C 1200 Irm (A) Qrr (nC) 20 30 150°C Qrr 5 25°C Irm 25°C 10 S 120 20 Trr 15 25°C S 500 240 10 150°C 400 Irm 8 120 0 0 150°C 5 25°C 25°C 0 100 200 300 400 500 600 di/dt (A/ms) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=20A) Rev.2.0: January 2021 S 0 100 www.aosmd.com 200 300 400 500 600 di/dt (A/ms) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=20A) Page 7 of 9 AOTF20B65M2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=2.8°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 T 0.0001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=3.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 1E-06 T 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.2.0: January 2021 www.aosmd.com Page 8 of 9 AOTF20B65M2 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.2.0: January 2021 www.aosmd.com Page 9 of 9