AOTF20N40L

AOTF20N40/AOTF20N40L 400V,20A N-Channel MOSFET General Description Product Summary The AOTF20N40 & AOTF20N40L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 500@150℃ 20A RDS(ON) (at VGS=10V) < 0.25W 100% UIS Tested 100% Rg Tested Top View D TO-220F G AOTF20N40(L) G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOTF20N40 AOTF20N40L Drain-Source Voltage VDS 400 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ±30 ID V 20* 20* 13* 13* IDM Units V A 54 Avalanche Current C IAR 6 A Repetitive avalanche energy C EAR 540 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS dv/dt 1080 5 mJ V/ns W PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev 1.0: January 2021 50 40 0.4 0.3 -55 to 150 W/ oC °C 300 °C AOTF20N40 65 2.5 www.aosmd.com AOTF20N40L 65 3.1 Units °C/W °C/W Page 1 of 6 AOTF20N40/AOTF20N40L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 400 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage Static Drain-Source On-Resistance VDS=5V, ID=250mA gFS Forward Transconductance VDS=40V, ID=10A 20 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS ISM RDS(ON) ID=250μA, VGS=0V, TJ=150°C 500 V ID=250μA, VGS=0V 0.4 V/ oC VDS=400V, VGS=0V 1 VDS=320V, TJ=125°C 10 ±100 3.0 VGS=10V, ID=10A mA 3.7 4.3 nA V 0.2 0.25 W S 1 V Maximum Body-Diode Continuous Current 20 A Maximum Body-Diode Pulsed Current 54 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 1898 2290 pF 145 212 290 pF 9 15 21 pF 1.5 3 4.5 W 28 37 45 nC VGS=10V, VDS=320V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/ms,VDS=100V Body Diode Reverse Recovery Time 1510 VGS=10V, VDS=200V, ID=20A, RG=25W 12 nC 12 nC 44 ns 87 ns 96 ns 59 IF=20A,dI/dt=100A/ms,VDS=100V ns 220 285 345 3 3.9 4.8 ns mC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using