AOTF20N60

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 20A RDS(ON) (at VGS=10V) < 0.37Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT20N60L&AOTF20N60L Top View D TO-220F TO-220 G G D S AOT20N60 G D S S AOTF20N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT20N60 Drain-Source Voltage VDS 600 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C AOTF20N60 V 20 ID Units V 20* 12 12* A Pulsed Drain Current C IDM Avalanche Current C IAR 6.5 A Repetitive avalanche energy C EAR 630 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 1260 5 mJ V/ns W 80 PD 50 0.4 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOT20N60 65 AOTF20N60 65 Units °C/W 0.5 0.3 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev2: Dec 2011 417 3.3 www.aosmd.com Page 1 of 6 AOT20N60/AOTF20N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.8 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A gFS Forward Transconductance VDS=40V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.8 4.5 nΑ V 0.29 0.37 Ω 1 V Maximum Body-Diode Continuous Current 20 A Maximum Body-Diode Pulsed Current 80 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge S 2448 3061 3680 pF 190 273 360 pF 13 22.8 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω 48 61 74 nC 14 18 22 nC 12 24 36 nC VGS=10V, VDS=480V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time 25 0.69 VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3.2 VGS=10V, VDS=300V, ID=20A, RG=25Ω IF=20A,dI/dt=100A/µs,VDS=100V 57 ns 125 ns 128 ns 88 ns 384 480 580 8 10.5 13 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using