AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60
600V 20A α MOS
General Description
Product Summary
The AOT20S60L & AOB20S60L & AOTF20S60L &
AOTF20S60 have been fabricated using the advanced αMOSTM
high voltage process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed
avalanche capability these parts can be adopted quickly into
new and existing offline power supply designs.
VDS @ Tj,max
700V
IDM
80A
TM
RDS(ON),max
0.199Ω
Qg,typ
20nC
Eoss @ 400V
4.9µJ
Power Transistor
100% UIS Tested
100% Rg Tested
Top View
TO-220
TO-263
D2PAK
TO-220F(3kVAC; 1s)
D
D
D
G
D
S
G
G
AOT20S60L
S
S
Gate-Source Voltage
AOB20S60L
AOT20S60L/AOB20S60L
TC=100°C
C
ID
AOTF20S60
600
AOTF20S60L
±30
VGS
TC=25°C
Continuous Drain
Current
S
G
AOTF20S60(L)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Pulsed Drain Current
D
20
14
Units
V
V
20*
20*
14*
14*
A
IDM
80
Avalanche Current C
IAR
3.4
A
Repetitive avalanche energy C
EAR
23
mJ
Single pulsed avalanche energy G
EAS
TC=25°C
PD
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
J
purpose, 1/8" from case for 5 seconds
TL
Thermal Characteristics
Parameter
A,D
Maximum Junction-to-Ambient
Symbol
RθJA
mJ
50
37.8
W
2.1
0.4
0.3
W/ oC
100
20
V/ns
-55 to 150
°C
300
°C
dv/dt
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev 6.0: Sepetember 2017
188
266
AOT20S60L/AOB20S60L
AOTF20S60
AOTF20S60L
Units
65
65
65
°C/W
0.5
0.47
-2.5
-3.3
°C/W
°C/W
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Page 1 of 7
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Units
600
-
-
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.8
3.4
4.1
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=10A, TJ=25°C
-
0.18
0.199
Ω
VGS=10V, ID=10A, TJ=150°C
-
0.48
0.53
Ω
IS=10A,VGS=0V, TJ=25°C
-
0.84
-
V
Maximum Body-Diode Continuous Current
-
-
20
A
Maximum Body-Diode Pulsed CurrentC
-
-
80
A
-
1038
-
pF
-
68
-
pF
-
56.6
-
pF
-
176.5
-
pF
VGS=0V, VDS=100V, f=1MHz
-
2.1
-
pF
VGS=0V, VDS=0V, f=1MHz
-
9.3
-
Ω
-
19.8
-
nC
-
4.6
-
nC
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=10A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
7.6
-
nC
tD(on)
Turn-On DelayTime
-
27.5
-
ns
tr
Turn-On Rise Time
-
32
-
ns
tD(off)
Turn-Off DelayTime
-
87.5
-
ns
tf
trr
Turn-Off Fall Time
-
30
-
ns
VGS=10V, VDS=400V, ID=10A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=10A,dI/dt=100A/µs,VDS=400V
-
350
-
ns
Irm
IF=10A,dI/dt=100A/µs,VDS=400V
-
27
-
Qrr
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=400V
-
5.7
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
