AOTF2142L

AOT2142L/AOTF2142L 40V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 40V 120A / 112A RDS(ON) (at VGS=10V) < 1.9mΩ RDS(ON) (at VGS=4.5V) < 2.5mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial Top View D TO-220 TO-220F G S AOT2142L AOTF2142L Orderable Part Number Package Type Form Minimum Order Quantity AOT2142L AOTF2142L TO-220 TO-220F Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current Avalanche Current C C Avalanche energy VDS Spike L=0.3mH C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C 78 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.3.0: September 2016 50 IAS 60 A EAS 540 mJ 48 41 156 20 8.3 TJ, TSTG Steady-State RθJA RθJC -55 to 175 AOT2142L(Max) 15 60 0.48 www.aosmd.com W W 5.3 Symbol Steady-State V 312 PDSM t ≤ 10s A 40 PD Junction and Storage Temperature Range A 600 VSPIKE TA=25°C V 120 G IDSM TA=70°C Units V 112 IDM TA=25°C Continuous Drain Current ±20 120 G ID TC=100°C AOTF2142L(Max) 40 VGS TC=25°C Pulsed Drain Current AOT2142L(Max) AOTF2142L(Max) 15 60 3.6 °C Units °C/W °C/W °C/W Page 1 of 7 AOT2142L/AOTF2142L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA ±100 nA 2.3 V 1.55 1.9 2.25 2.8 VGS=4.5V, ID=20A 1.95 2.5 VDS=5V, ID=20A 100 gFS Forward Transconductance VSD IS IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G(AOT2142L) IS Maximum Body-Diode Continuous Current (AOTF2142L) 1.3 TJ=125°C 0.66 DYNAMIC PARAMETERS Input Capacitance Ciss Reverse Transfer Capacitance Gate resistance µA 5 1.8 Static Drain-Source On-Resistance Rg V TJ=55°C RDS(ON) Crss Units 1 VGS=10V, ID=20A Output Capacitance Max 40 VDS=40V, VGS=0V IDSS Coss Typ VGS=0V, VDS=20V, f=1MHz mΩ mΩ S 1 V 120 A 50 A 8320 pF 1438 pF 85 f=1MHz 0.5 1.15 pF 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 100 nC Qg(4.5V) Total Gate Charge 45 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=20V, ID=20A VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω 25 nC 7 nC 19 ns 7 ns 69 ns 10 ns IF=20A, dI/dt=400A/µs 26 Body Diode Reverse Recovery Charge IF=20A, dI/dt=400A/µs 83 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area for AOT2142L (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.48°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2142L (Note F) Rev.3.0: September 2016 www.aosmd.com Page 4 of 7 AOT2142L/AOTF2142L 350 140 300 120 250 100 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 150 100 50 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating for AOT2142L (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating for AOT2142L (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 0.1 PDM 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: September 2016 www.aosmd.com Page 5 of 7 AOT2142L/AOTF2142L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 140 120 Current rating ID(A) Power Dissipation (W) 40 30 20 10 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 16: Power De-rating for AOTF2142L (Note F) 25 50 75 100 RDS(ON) limited TJ(Max)=175°C TC=25°C 10µs 100µs 800 1ms 10ms 10.0 1.0 Power (W) ID (Amps) 175 1000 10µs 0.1 150 TCASE (°C) Figure 17: Current De-rating for AOTF2142L (Note F) 1000.0 100.0 125 DC TJ(Max)=175°C TC=25°C 0.0 0.01 0.1 600 400 200 1 10 VDS (Volts) 100 0 0.0001 0.001 1000 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 19: Single Pulse Power Rating Junction-toCase for AOTF2142L (Note F) VGS> or equal to 4.5V Figure 18: Maximum Forward Biased Safe Operating Area for AOTF2142L (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.6°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 20: Normalized Maximum Transient Thermal Impedance for AOTF2142L (Note F) Rev.3.0: September 2016 www.aosmd.com Page 6 of 7 AOT2142L/AOTF2142L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.3.0: September 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7