AOTF22N50L

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 22A RDS(ON) (at VGS=10V) < 0.26Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT22N50L&AOTF22N50L Top View TO-220F TO-220 G D D G S AOT22N50 G D S S AOTF22N50 Orderable Part Number Package Type Form Minimum Order Quantity AOT22N50L AOTF22N50 AOTF22N50L TO220 Green TO-220F Pb Free TO-220F Green Tube Tube Tube 1000 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT22N50 Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOTF22N50 AOTF22N50L 500 ±30 Units V V 22 22* 22* 15 15* 15* A Pulsed Drain Current C IDM Avalanche Current C IAR 7 A Repetitive avalanche energy C EAR 735 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 1470 5 50 mJ V/ns W Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D PD 417 3.3 TL 0.4 -55 to 150 39 0.3 300 Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.2.0: October 2014 88 AOT22N50 65 0.5 0.3 www.aosmd.com °C AOTF22N50 AOTF22N50L 65 65 -2.5 W/ oC °C -3.2 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 600 V ID=250µA, VGS=0V 0.57 V/ oC VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A gFS Forward Transconductance VDS=40V, ID=11A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 ±100 3.4 µA 4 4.5 nΑ V 0.21 0.26 Ω 1 V S IS Maximum Body-Diode Continuous Current 22 A ISM Maximum Body-Diode Pulsed Current 88 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2465 3086 3710 pF VGS=0V, VDS=25V, f=1MHz 200 290 380 pF 14 24 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω 55 69 83 nC 17 22 27 nC 12 24 36 nC SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=400V, ID=22A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=22A,dI/dt=100A/µs,VDS=100V 415 524 630 Qrr Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V 7.5 9.6 12 Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=22A, RG=25Ω 60 ns 122 ns 124 ns 77 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using