AOT25S65/AOB25S65/AOTF25S65
650V 25A α MOS
TM
Power Transistor
General Description
Product Summary
The AOT25S65 & AOB25S65 & AOTF25S65 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
750V
IDM
104A
RDS(ON),max
0.19Ω
Qg,typ
26.4nC
Eoss @ 400V
5.8µC
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT25S65L & AOB25S65 & AOTF25S65L
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
D
S
AOT25S65
G
D
S
AOTF25S65
Gate-Source Voltage
VGS
TC=25°C
TC=100°C
Pulsed Drain Current
C
ID
S
AOB25S65
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOT25S65/AOB25S65
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current
G
S
G
AOTF25S65
650
AOTF25S65L
±30
25
16
IDM
Units
V
V
25*
25*
16*
16*
A
104
Avalanche Current C
IAR
7
A
Repetitive avalanche energy C
EAR
96
mJ
Single pulsed avalanche energy G
EAS
TC=25°C
B
Power Dissipation
Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
PD
TJ, TSTG
TL
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev1: Mar 2012
2.9
dv/dt
Symbol
RθJA
mJ
750
357
50
0.4
100
20
-55 to 150
40
W
0.3
W/ oC
V/ns
°C
300
°C
AOT25S65/AOB25S65
AOTF25S65
AOTF25S65L
Units
65
65
65
°C/W
0.5
0.35
-2.5
-3.1
°C/W
°C/W
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AOT25S65/AOB25S65/AOTF25S65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
650
-
-
ID=250µA, VGS=0V, TJ=150°C
700
750
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
-
-
1
VDS=520V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.6
3.3
4
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=12.5A, TJ=25°C
-
0.165
0.19
Ω
VGS=10V, ID=12.5A, TJ=150°C
-
0.47
0.53
Ω
IS=12.5A,VGS=0V, TJ=25°C
-
0.84
-
V
Maximum Body-Diode Continuous Current
-
-
25
A
Maximum Body-Diode Pulsed Current
-
-
104
A
-
1278
-
pF
-
87
-
pF
-
64.5
-
pF
-
236.7
-
pF
VGS=0V, VDS=100V, f=1MHz
-
1.4
-
pF
VGS=0V, VDS=0V, f=1MHz
-
4.9
-
Ω
-
26.4
-
nC
-
6.2
-
nC
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=12.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
9.5
-
nC
tD(on)
Turn-On DelayTime
-
29
-
ns
tr
Turn-On Rise Time
-
30
-
ns
tD(off)
Turn-Off DelayTime
-
112
-
ns
tf
trr
Turn-Off Fall Time
-
34
-
ns
IF=12.5A,dI/dt=100A/µs,VDS=400V
VGS=10V, VDS=400V, ID=12.5A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
-
408
-
ns
Irm
IF=12.5A,dI/dt=100A/µs,VDS=400V
-
33
-
Qrr
Body Diode Reverse Recovery Charge IF=12.5A,dI/dt=100A/µs,VDS=400V
-
8.27
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
