AOTF260L

AOTF260L 60V N-Channel MOSFET General Description Product Summary The AOTF260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 60V 92A < 2.6mΩ RDS(ON) (at VGS=6V) < 3.0mΩ 100% UIS Tested 100% Rg Tested TO220F Top View Bottom View G D D G S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: Aug. 2012 19 128 A EAS 819 mJ 46.5 Steady-State Steady-State W 23.5 1.9 RθJA RθJC W 1.2 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C A 15 PD TC=100°C V 368 IDSM TA=70°C ±20 66.5 IDM TA=25°C Continuous Drain Current Units V 92 ID TC=100°C Maximum 60 -55 to 175 Typ 12 54 2.6 www.aosmd.com °C Max 15 65 3.2 Units °C/W °C/W °C/W Page 1 of 6 AOTF260L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Min Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 368 TJ=55°C 5 VGS=10V, ID=20A TJ=125°C nA 2.7 3.2 V 2.1 2.6 A 3.5 4.3 2.3 3.0 Forward Transconductance VDS=5V, ID=20A 68 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 0.65 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=30V, ID=20A 0.5 µA ±100 VGS=6V, ID=20A gFS Units V VDS=60V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 60 IDSS RDS(ON) Typ mΩ S 1 V 55 A 11800 pF 1360 pF 40 pF 1 1.5 Ω 150 210 nC Qgs Gate Source Charge 40 nC Qgd Gate Drain Charge 15 nC tD(on) Turn-On DelayTime 30 ns 27 ns 74 ns 12 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 32 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 200 nC VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using