AOTF266L

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 60V 140A/78A RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) RDS(ON) (at VGS=6V) < 4.0mΩ (< 3.8mΩ∗) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D G D S G AOT266L D AOTF266L S G D AOB266L S S G Orderable Part Number Package Type Form Minimum Order Quantity AOT266L AOTF266L AOB266L TO220 Green TO220F Green TO263 Green Tube Tube Tape & Reel 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT266L/AOB266L Drain-Source Voltage VDS 60 Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current ±20 140 ID TC=100°C C V 55 A 450 18 IDSM TA=70°C Units V 78 110 IDM TA=25°C AOTF266L A 14 Avalanche Current C IAS 90 A Avalanche energy L=0.1mH C EAS 405 mJ TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C 45.5 134 22.5 2.1 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 268 Symbol t ≤ 10s Steady-State Steady-State W 1.3 TJ, TSTG RθJA RθJC -55 to 175 AOT266L/AOB266L 15 60 0.56 W °C AOTF266L 15 60 3.3 Units °C/W °C/W °C/W * Surface mount package TO263 Rev.4.0: September 2013 www.aosmd.com Page 1 of 7 AOT266L/AOB266L/AOTF266L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 5 2.2 VGS=10V, ID=20A TO220/TO220F TJ=125°C VGS=6V, ID=20A TO220/TO220F VGS=10V, ID=20A Static Drain-Source On-Resistance TO263 VGS=6V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge nA 3.2 V 2.9 3.5 4.9 5.9 3.2 4 mΩ 2.6 3.2 mΩ 3 3.8 mΩ 1 V 140 A VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=30V, RL=1.5Ω, Ω RGEN=3Ω 0.4 mΩ S 5650 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs ±100 80 VGS=0V, VDS=30V, f=1MHz µA 2.7 0.65 DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 TJ=55°C VGS(th) Max 60 VDS=60V, VGS=0V IGSS RDS(ON) Typ pF 720 pF 20 pF 0.9 1.4 Ω 65 90 nC 20 nC 7 nC 21 ns 20 ns 36 ns 6 ns IF=20A, dI/dt=500A/µs 27 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 145 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using