AOTF27S60L

AOT27S60L/AOB27S60L/AOTF27S60L/AOTF27S60 600V 27A α MOS TM Power Transistor General Description Product Summary The AOT27S60L & AOB27S60L & AOTF27S60L & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 110A RDS(ON),max 0.16Ω Qg,typ 26nC Eoss @ 400V 6µJ 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F(3kVAC;1s) D D D G S G AOT27S60L D AOTF27S60(L) G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT27S60L/AOB27S60L Parameter Symbol Drain-Source Voltage VDS AOTF27S60 600 Gate-Source Voltage ±30 VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID S G AOB27S60L 27 17 AOTF27S60L Units V V 27* 27* 17* 17* A 110 IDM Avalanche Current C IAR 7.5 A Repetitive avalanche energy C EAR 110 mJ Single pulsed avalanche energy G EAS TC=25°C PD Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA mJ 50 40 W 2.9 0.4 0.3 W/ oC dv/dt RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev 7.0: Sepetember 2017 480 357 100 20 V/ns -55 to 150 °C 300 °C AOT27S60L/AOB27S60L AOTF27S60 AOTF27S60L 65 65 65 °C/W 0.5 0.35 -2.5 -3.1 °C/W °C/W www.aosmd.com Units Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Units 600 - - 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.5 3.3 4 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=13.5A, TJ=25°C - 0.14 0.16 Ω VGS=10V, ID=13.5A, TJ=150°C - 0.38 0.44 Ω IS=13.5A,VGS=0V, TJ=25°C - 0.85 - V Maximum Body-Diode Continuous Current - - 27 A Maximum Body-Diode Pulsed Current - - 110 A - 1294 - pF - 80 - pF - 69 - pF - 221 - pF - 2.3 - pF 2.4 4.7 6.7 Ω DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg - 26 - nC - 6.2 - nC Gate Drain Charge - 8.8 - nC Turn-On DelayTime - 31 - ns - 33 - ns - 99 - ns - 34 - ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=10V, VDS=480V, ID=13.5A VGS=10V, VDS=400V, ID=13.5A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=13.5A,dI/dt=100A/µs,VDS=400V - 440 - ns Irm IF=13.5A,dI/dt=100A/µs,VDS=400V - 28 - Qrr Body Diode Reverse Recovery Charge IF=13.5A,dI/dt=100A/µs,VDS=400V - 7.5 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using