AOTF286L

AOTF286L 80V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 80V 56A RDS(ON) (at VGS=10V) < 6mΩ RDS(ON) (at VGS=6V) < 8mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO220F Top View Bottom View G D D G S S D G S Orderable Part Number Package Type Form Minimum Order Quantity AOTF286L TO-220F Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.1mH C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: January 2015 IAS 50 A EAS 125 mJ 96 V 37.5 2.2 Steady-State W 1.4 TJ, TSTG Symbol Steady-State W 18.5 PDSM t ≤ 10s A 10.5 PD Junction and Storage Temperature Range A 13.5 VSPIKE TA=25°C V 225 IDSM TA=70°C ±20 39 IDM TA=25°C Continuous Drain Current Units V 56 ID TC=100°C C Maximum 80 RθJA RθJC -55 to 175 Typ 10 45 3.3 www.aosmd.com °C Max 15 55 4.0 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 2.3 TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr V VGS=10V, VDS=40V, ID=20A µA 5 VGS=10V, ID=20A VDS=5V, ID=20A Units 1 TJ=55°C Static Drain-Source On-Resistance Max 80 VDS=80V, VGS=0V IDSS RDS(ON) Typ 0.6 ±100 nA 2.7 3.3 V 5.0 6.0 8.1 9.8 6.4 8.0 mΩ 1 V 40 A 60 0.7 mΩ S 3142 pF 435 pF 43 pF 1.3 2.0 Ω 44.5 63 nC 12 nC 8 nC 13.5 ns 11 ns 32 ns 11 ns IF=20A, dI/dt=500A/µs 29 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 161 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.0°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2015 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C 100 TA=100°C TA=150°C TA=125°C 40 30 20 10 0 10 1 10 100 0 1000 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 10000 80 TA=25°C 1000 Power (W) Current rating ID(A) 60 40 100 10 20 0 0 25 50 75 100 125 150 175 1 1E-05 ZθJA Normalized Transient Thermal Resistance TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: January 2015 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: January 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6