AOTF290L

AOTF290L 100V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 100V 72A RDS(ON) (at VGS=10V) < 4.2mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO220F Top View Bottom View G D D G S S D G S Orderable Part Number Package Type Form Minimum Order Quantity AOTF290L TO-220F Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy VDS Spike L=0.1mH I C 10µs TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: August 2016 34 72 A EAS 259 mJ VSPIKE 120 V 48 Steady-State Steady-State W 24 8.3 W 5.3 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C A 27 PD TC=100°C V 290 IDSM TA=70°C ±20 58 IDM TA=25°C Continuous Drain Current Units V 72 ID TC=100°C Maximum 100 RθJA RθJC www.aosmd.com -55 to 175 Typ 10 45 2.6 °C Max 15 55 3.1 Units °C/W °C/W °C/W Page 1 of 6 AOTF290L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA Static Drain-Source On-Resistance TJ=55°C 2.9 VGS=10V, ID=20A TJ=125°C ±100 nA 3.5 4.1 V 3.4 4.2 4.9 6.1 Forward Transconductance VDS=5V, ID=20A 50 Diode Forward Voltage IS=1A, VGS=0V 0.67 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd mΩ S 1 V 72 A 7180 VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 5 gFS Output Capacitance Units 1 VSD Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=10V, VDS=50V, ID=20A 0.8 pF 2780 pF 42 pF 1.7 2.6 Ω 90 126 nC 33 nC Gate Drain Charge 21 nC tD(on) Turn-On DelayTime 31 ns tr Turn-On Rise Time 24 ns tD(off) Turn-Off DelayTime 45 ns tf trr Turn-Off Fall Time 27 ns IF=20A, di/dt=500A/µs 65 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 460 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 10V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.1°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: August 2016 www.aosmd.com Page 4 of 6 AOTF290L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 Power Dissipation (W) 50 80 Current rating ID (A) 40 30 20 10 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: August 2016 www.aosmd.com Page 5 of 6 AOTF290L Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Switching Test Circuit & Waveforms Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: August 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6