AOTF2918L

AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary The AOT2918L & AOB2918L & AOTF2918L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 100V 90A RDS(ON) (at VGS=10V) < 7mΩ 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT2918L D S G AOTF2918L D S S AOB2918L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT2918L/AOB2918L Symbol Drain-Source Voltage VDS 100 Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current ID TC=100°C C V 45 A 260 13 IDSM TA=70°C Units V 58 70 IDM TA=25°C AOTF2918L ±20 90 S G A 10 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C EAS, EAR 61 mJ VDS Spike I 10µs VSPIKE TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.4.0: July 2016 133 20 2.1 Steady-State Steady-State RθJA RθJC -55 to 175 AOT2918L/AOB2918L 15 60 0.56 www.aosmd.com W W 1.33 TJ, TSTG Symbol t ≤ 10s V 41 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 120 267 °C AOTF2918L 15 60 3.6 Units °C/W °C/W °C/W Page 1 of 7 AOT2918L/AOB2918L/AOTF2918L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 100 Typ 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 2.7 ID(ON) On state drain current VGS=10V, VDS=5V 260 TJ=55°C VGS=10V, ID=20A 100 nA 3.3 3.9 V 5.6 7 9 12 A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 34 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=50V, ID=20A µA 5 RDS(ON) Output Capacitance Units V VDS=100V, VGS=0V IDSS Coss Max mΩ S 1 V 90 A 2580 3430 pF 1530 2035 pF 37 63 pF 1.5 2.3 Ω 38 53 nC Qgs Gate Source Charge Qgd Gate Drain Charge 12 tD(on) Turn-On DelayTime 17 38 ns tr Turn-On Rise Time 24 53 ns VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 12 nC nC 30 66 ns 24 53 ns 46 65 230 320 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using