AOTF298L

AOT298L/AOB298L/AOTF298L 100V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge ID (at VGS=10V) 100V 58A/33A RDS(ON) (at VGS=10V) < 14.5mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Notebook Adaptor, TV Power Supply applications Top View TO-220 TO-263 D2PAK TO-220F D D G G AOT298L D S G AOTF298L D S S AOB298L S G Orderable Part Number Package Type Form Minimum Order Quantity AOT298L AOB298L AOTF298L TO-220 TO-263 TO-220F Tube Tape & Reel Tube 1000 800 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT298L/AOB298L Symbol Drain-Source Voltage VDS 100 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C TA=25°C Continuous Drain Avalanche Current V 26 A 130 9 IDSM C Units V 33 41 IDM TA=70°C Current ±20 58 ID TC=100°C AOTF298L A 7 IAS, IAR 20 A Avalanche energy L=0.1mH C EAS, EAR 20 mJ VDS Spike VSPIKE 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev.3.0: March 2016 Steady-State Steady-State RθJA RθJC 50 16 -55 to 175 AOT298L/AOB298L 15 60 1.5 www.aosmd.com W W 1.33 TJ, TSTG Symbol t ≤ 10s V 33 2.1 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 110 100 °C AOTF298L 15 60 4.5 Units °C/W °C/W °C/W Page 1 of 7 AOT298L/AOB298L/AOTF298L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS，ID=250µA 2.7 VGS=10V, VDS=5V 130 TJ=55°C VGS=10V, ID=20A ±100 nA 3.3 4.1 V 12 14.5 19 24 A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=50V, ID=20A µA 5 RDS(ON) Output Capacitance Units 1 Zero Gate Voltage Drain Current Coss Max V VDS=100V, VGS=0V IDSS ID(ON) Typ 0.8 mΩ S 1 V 70 A 1250 1670 pF 727 970 pF 25 43 pF 2 3 Ω 19 27 nC 5.5 nC 6 nC 7.5 ns 14 ns 15 ns 14 ns IF=20A, dI/dt=500A/µs 39 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 140 ns nC VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using