AOTF29S50L

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 500V 29A α MOS TM Power Transistor General Description Product Summary The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced TM αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 600V IDM 120A RDS(ON),max 0.15Ω Qg,typ 26.6nC Eoss @ 400V 6.3µJ 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D D G D AOT29S50L S G D G S S AOB29S50L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT29S50L/AOB29S50L AOTF29S50 500 Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID S G AOTF29S50(L) AOTF29S50L ±30 29 18 Units V V 29* 29* 18* 18* A 120 IDM Avalanche Current C IAR 7.5 A Repetitive avalanche energy C EAR 110 mJ Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D PD 37.9 W 2.9 0.4 0.3 o W/ C TJ, TSTG 100 20 V/ns -55 to 150 °C 300 °C TL Symbol RθJA mJ 50 dv/dt RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev1.0: August 2017 608 357 AOT29S50L/AOB29S50L AOTF29S50 AOTF29S50L Units 65 65 65 °C/W 0.5 0.35 -2.5 -3.3 °C/W °C/W www.aosmd.com Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Typ Max Units 500 - - 550 600 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V - - 1 VDS=400V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.6 3.3 3.9 nΑ V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=14.5A, TJ=25°C - 0.13 0.15 Ω VGS=10V, ID=14.5A, TJ=150°C - 0.34 0.4 Ω IS=14.5A,VGS=0V, TJ=25°C VSD Diode Forward Voltage - 0.85 - V IS Maximum Body-Diode Continuous Current - - 29 A ISM Maximum Body-Diode Pulsed Current - - 120 A - 1312 - pF - 88 - pF - 78 - pF - 227 - pF VGS=0V, VDS=100V, f=1MHz - 2.5 - pF VGS=0V, VDS=0V, f=1MHz - 4.8 - Ω - 26.6 - nC - 6.2 - nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 400V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=14.5A Qgs Gate Source Charge Qgd Gate Drain Charge - 9.2 - nC tD(on) Turn-On DelayTime - 28 - ns tr Turn-On Rise Time - 39 - ns tD(off) Turn-Off DelayTime - 103 - ns tf trr Turn-Off Fall Time VGS=10V, VDS=400V, ID=14.5A, RG=25Ω - 40 - ns IF=14.5A,dI/dt=100A/µs,VDS=400V - 387 - ns A µC Irm Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=14.5A,dI/dt=100A/µs,VDS=400V - 29.6 - Qrr Body Diode Reverse Recovery Charge IF=14.5A,dI/dt=100A/µs,VDS=400V - 7.3 - A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using