AOTF3N100

AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 1100@150℃ 2.8A RDS(ON) (at VGS=10V) < 6Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT3N100 & AOTF3N100L Top View D TO-220F TO-220 G AOT3N100 D G S AOTF3N100 G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT3N100 AOTF3N100 Symbol Drain-Source Voltage VDS 1000 Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ±30 V 2.8 ID Units V 2.8* 1.8 1.8* A Pulsed Drain Current C IDM 10 Avalanche Current C IAR 2.2 A Repetitive avalanche energy C EAR 72 mJ 145 5 mJ V/ns W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev. 1.0 January 2013 132 38 1.1 0.3 -55 to 150 W/ oC °C 300 °C AOT3N100 65 0.5 0.95 www.aosmd.com AOTF3N100 65 -3.3 Units °C/W °C/W °C/W Page 1 of 6 AOT3N100/AOTF3N100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 1000 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 1100 V ID=250µA, VGS=0V 1.07 V/ oC VDS=1000V, VGS=0V 1 VDS=800V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 3.3 µA 4 4.5 nΑ V 6 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.5A 4.8 gFS Forward Transconductance VDS=40V, ID=1.5A 4 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 2.8 A ISM Maximum Body-Diode Pulsed Current 10 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd S 0.76 550 690 830 pF 30 44 60 pF 2 5 8 pF 1.6 3.5 5.2 Ω 15 20 nC 10 VGS=10V, VDS=800V, ID=3A 3.8 nC Gate Drain Charge 4.7 nC tD(on) Turn-On DelayTime 22 ns tr Turn-On Rise Time 25 ns tD(off) Turn-Off DelayTime 40 ns tf trr Turn-Off Fall Time IF=3A,dI/dt=100A/µs,VDS=100V 300 400 500 Qrr Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V 2.7 3.7 4.7 Body Diode Reverse Recovery Time VGS=10V, VDS=500V, ID=3A, RG=25Ω 24 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using