AOTF4185

AOTF4185 40V P-Channel MOSFET General Description Product Summary The AOTF4185 combines advanced trench MOSFET 40V technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) -40V -34A RDS(ON) (at VGS=-10V) < 16mΩ RDS(ON) (at VGS =-4.5V) < 20mΩ VDS 100% UIS Tested 100% Rg Tested TO220F Top View D Bottom View G G D S S D S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V -34 ID TC=100°C Maximum -40 -27 A IDM -100 Avalanche Current C IAS, IAR -42 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 88 mJ Power Dissipation B Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient AD Maximum Junction-to-Case Symbol RθJA RθJC Rev.2.0: May 2013 33 PD TC=100°C t ≤ 10s Steady-State W 16 -55 to 175 Typ 10 3 www.aosmd.com °C Max 13 4.5 Units °C/W °C/W Page 1 of 6 AOTF4185 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -120 nA -2.5 V 13 16 19 23 VGS=-4.5V, ID=-15A 16 20 50 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-20V, f=1MHz Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=-10V, VDS=-20V, ID=-20A 2.5 mΩ S V -20 A 2550 pF 280 pF pF Ω 4 6 42 55 18.6 nC nC 7 nC 8.6 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 25 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 75 VGS=-10V, VDS=-20V, RL=1.0Ω, RGEN=3Ω mΩ -1 190 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) A -0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Crss µA ±100 Static Drain-Source On-Resistance Output Capacitance Units -1.85 VGS=-10V, ID=-20A Coss Max V VDS=-40V, VGS=0V IGSS RDS(ON) Typ 9.4 ns 20 ns 55 ns 30 ns 33 ns nC A. The value of RθJA is measured with the device in a still air environment with TA =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using