AOTF454L

AOTF454L 150V N-Channel MOSFET General Description Product Summary The AOTF454L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 150V 13A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 94mΩ RDS(ON) (at VGS=7V) < 110mΩ 100% UIS Tested 100% Rg Tested TO220F Top View D Bottom View G D G S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C Avalanche Current C IAS, IAR Avalanche energy L=0.1mH C EAS, EAR TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0: February 2011 Steady-State Steady-State 5 A 1.3 mJ 41 W 16 2.1 RθJA RθJC www.aosmd.com W 1.3 -55 to 150 TJ, TSTG Symbol t ≤ 10s A 2.5 PDSM TA=70°C A 3 PD TC=100°C V 40 IDSM TA=70°C ±20 8 IDM TA=25°C Units V 13 ID TC=100°C Maximum 150 Typ 10 48.5 2.4 °C Max 12 58 3 Units °C/W °C/W °C/W Page 1 of 6 AOTF454L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=150V, VGS=0V 150 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 3.4 VGS=10V, VDS=5V 40 VGS=10V, ID=10A TJ=125°C VGS=7V, ID=10A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge VGS=0V, VDS=75V, f=1MHz VGS=0V, VDS=0V, f=1MHz Units V TJ=55°C Static Drain-Source On-Resistance Max 1 VGS(th) ID(ON) RDS(ON) Typ µA ±100 nA 4 4.6 V 75.5 94 151 188 84 110 mΩ 1 V 45 A A 20 0.72 mΩ S 655 820 985 pF 50 70 90 pF 13 22 31 pF 0.7 1.4 2.1 Ω 10 15 20 nC VGS=10V, VDS=75V, ID=10A 4 nC Qgd Gate Drain Charge 4.4 nC tD(on) Turn-On DelayTime 10.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 20 32.5 45 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 160 230 300 VGS=10V, VDS=75V, RL=7.5Ω, RGEN=3Ω 5.5 ns 14.5 ns 3 ns ns nC 2 A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using