AOTF4N90

AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 1000V@150℃ 4A RDS(ON) (at VGS=10V) < 3.6Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF4N90L Top View D TO-220F G D G S S AOTF4N90 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOTF4N90 900 Units V ±30 V 4* 2.5* A Pulsed Drain Current C IDM 16 Avalanche Current C IAR 2.3 A Repetitive avalanche energy C EAR 79 mJ 158 5 37 mJ V/ns W 0.3 -55 to 150 W/ oC °C 300 °C AOTF4N90 65 3.3 Units °C/W °C/W Single plused avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev1: Jul 2011 www.aosmd.com Page 1 of 5 AOTF4N90 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 900 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V V 1 V/ oC VDS=900V, VGS=0V 1 VDS=720V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A gFS Forward Transconductance VDS=40V, ID=2A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ±100 µA 4.1 4.5 nΑ V 2.8 3.6 Ω 1 V Maximum Body-Diode Continuous Current 4 A Maximum Body-Diode Pulsed Current 16 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss 1000 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=720V, ID=4A 3.4 6 S 0.75 580 728 880 pF 41 52 70 pF 4.4 5.5 9 pF 2 4 6 Ω 14.5 18.4 22 nC 3.5 4.4 5.3 nC 6.4 8 12 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=4A,dI/dt=100A/µs,VDS=100V 155 196 235 Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V 3.2 4.05 4.9 Body Diode Reverse Recovery Time VGS=10V, VDS=450V, ID=4A, RG=25Ω 22 ns 46 ns 43 ns 39 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using