AOTF6N90

AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 1000V@150℃ 6A RDS(ON) (at VGS=10V) < 2.2Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF6N90L Top View D TO-220F G D G S S AOTF6N90 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOTF6N90 900 Units V ±30 V 6* 3.9* A Pulsed Drain Current C IDM 24 Avalanche Current C IAR 3.3 A Repetitive avalanche energy C EAR 80 mJ 160 5 50 mJ V/ns W 0.4 -55 to 150 W/ oC °C 300 °C AOTF6N90 65 2.5 Units °C/W °C/W Single plused avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev1: Jul 2011 www.aosmd.com Page 1 of 5 AOTF6N90 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 900 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V 1000 V 1 V/ oC VDS=900V, VGS=0V 1 VDS=720V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A gFS Forward Transconductance VDS=40V, ID=3A VSD Diode Forward Voltage IS=1A,VGS=0V IS=6A,VGS=0V ±100 3.4 µA 4.1 4.5 nΑ V 1.74 2.2 Ω 1 V 8 S 0.73 VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current 6 A ISM Maximum Body-Diode Pulsed Current 24 A 1196 1450 pF 65 82 110 pF 6 7.8 12 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.4 5.1 Ω 23 29 35 nC VGS=10V, VDS=720V, ID=6A 5.5 7 8.5 nC 10 13 20 nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V 955 VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=6A,dI/dt=100A/µs,VDS=100V 230 286 343 Qrr Body Diode Reverse Recovery Charge IF=6A,dI/dt=100A/µs,VDS=100V 4.5 5.6 6.7 Body Diode Reverse Recovery Time VGS=10V, VDS=450V, ID=6A, RG=25Ω 30 ns 58 ns 70 ns 49 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using