AOT7S60/AOB7S60/AOTF7S60
600V 7A α MOS TM Power Transistor
General Description
Product Summary
The AOT7S60 & AOB7S60 & AOTF7S60 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
700V
IDM
33A
RDS(ON),max
0.6Ω
Qg,typ
8.2nC
Eoss @ 400V
1.9µJ
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT7S60L & AOB7S60L & AOTF7S60L
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
D S
G
G
AOT7S60
D
G
S
S
AOB7S60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT7S60/AOB7S60
Symbol
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
TC=100°C
C
S
G
AOTF7S60
AOTF7S60L
V
±30
7
ID
Units
V
7*
5
5*
A
IDM
33
Avalanche Current C
IAR
1.7
A
Repetitive avalanche energy C
EAR
43
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
EAS
86
PD
W
0.8
0.3
W/ oC
100
20
-55 to 150
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
V/ns
°C
300
°C
AOT7S60/AOB7S60
AOTF7S60L
Units
65
65
°C/W
0.5
1.2
-5
°C/W
°C/W
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.1.0 October 2013
34
dv/dt
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
mJ
104
www.aosmd.com
Page 1 of 6
AOT7S60/AOB7S60/AOTF7S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
600
-
-
ID=250µA, VGS=0V, TJ=150°C
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
2.7
3.3
3.9
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3.5A, TJ=25°C
-
0.54
0.60
Ω
VGS=10V, ID=3.5A, TJ=150°C
-
1.48
1.64
Ω
VSD
Diode Forward Voltage
-
0.82
1.2
V
IS
Maximum Body-Diode Continuous Current
-
-
7
A
ISM
Maximum Body-Diode Pulsed CurrentC
-
-
33
A
-
372
-
pF
-
28
-
pF
-
22
-
pF
-
65
-
pF
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
IS=3.5A,VGS=0V, TJ=25°C
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
VGS=0V, VDS=100V, f=1MHz
-
1.2
-
pF
VGS=0V, VDS=0V, f=1MHz
-
17.5
-
Ω
-
8.2
-
nC
-
2.0
-
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=480V, ID=3.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
2.8
-
nC
tD(on)
Turn-On DelayTime
-
19
-
ns
tr
Turn-On Rise Time
-
13
-
ns
tD(off)
Turn-Off DelayTime
-
50
-
ns
tf
trr
Turn-Off Fall Time
VGS=10V, VDS=400V, ID=3.5A,
RG=25Ω
-
15
-
ns
IF=3.5A,dI/dt=100A/µs,VDS=400V
-
198
-
ns
A
µC
Irm
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=3.5A,dI/dt=100A/µs,VDS=400V
-
18
-
Qrr
Body Diode Reverse Recovery Charge IF=3.5A,dI/dt=100A/µs,VDS=400V
-
2.4
-
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
