AOTF7T60L

AOTF7T60 600V,7A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 28A RDS(ON),max < 1.1Ω Applications Qg,typ 16nC Eoss @ 400V 2.5µJ 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom Top View TO-220F D G AOTF7T60 G D S S Orderable Part Number Package Type Form Minimum Order Quantity AOTF7T60 AOTF7T60L TO-220F Pb Free TO-220F Green Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOTF7T60 Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage Continuous Drain Current TC=25°C TC=100°C AOTF7T60L 600 ±30 7* ID Units V V 7* 5* 5* A Pulsed Drain Current C IDM Avalanche Current C,J IAR 7 A Repetitive avalanche energy C,J EAR 25 mJ 270 50 5 mJ 28 Single pulsed avalanche energy G EAS MOSFET dv/dt ruggedness dv/dt Peak diode recovery dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol RθJA Maximum Junction-to-Ambient A,D Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.2.0 October 2013 V/ns 38 29 W 0.3 0.2 -55 to 150 W/ oC °C 300 °C AOTF7T60 AOTF7T60L Units 65 3.3 65 4.3 °C/W °C/W www.aosmd.com Page 1 of 6 AOTF7T60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.58 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A gFS Forward Transconductance VDS=40V, ID=3.5A 6.3 VSD Diode Forward Voltage IS=1A,VGS=0V 0.77 IS ISM 4 5 nΑ V 0.92 1.1 Ω 1 V Maximum Body-Diode Continuous Current 7 A Maximum Body-Diode Pulsed Current C 28 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) ±100 µA 3 S 962 pF 38 pF 30 pF 51 pF VGS=0V, VDS=100V, f=1MHz 6.3 pF f=1MHz 3.7 Ω VGS=10V, VDS=480V, ID=7A 5.6 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg 16 24 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4 nC tD(on) Turn-On DelayTime 27 ns tr Turn-On Rise Time 40 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=300V, ID=7A, RG=25Ω 38 ns tf trr Turn-Off Fall Time 27 ns IF=7A,dI/dt=100A/µs,VDS=100V 426 Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V ns µC Body Diode Reverse Recovery Time 5 A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using