AOTF8N65

AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS TO-220 G D Top View ID (at VGS=10V) 750V@150℃ 8A RDS(ON) (at VGS=10V) < 1.15W 100% UIS Tested 100% Rg Tested TO-220F D G G D S S AOT8N65 S AOTF8N65 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT8N65 Drain-Source Voltage VDS 650 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D ID Units V V 8 8* 5.2 5.2* A IDM 32 IAR 3.4 A EAR 173 mJ EAS 347 50 5 mJ dv/dt PD 208 50.0 W 0.3 -55 to 150 W/ C °C 300 °C TL Symbol RqJA RqCS V/ns 1.67 TJ, TSTG o AOT8N65 65 AOTF8N65 65 Units °C/W 0.5 0.6 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.5.0: January 2021 AOTF8N65 www.aosmd.com Page 1 of 6 AOT(F)8N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS=5V ID=250mA gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM VGS(th) ID=250μA, VGS=0V, TJ=150°C 750 ID=250μA, VGS=0V VDS=650V, VGS=0V 0.7 V o V/ C 1 VDS=520V, TJ=125°C 10 ±100 mA 4 4.5 nA V VGS=10V, ID=4A 0.91 1.15 W VDS=40V, ID=4A 11 3 S 1 V Maximum Body-Diode Continuous Current 8 A Maximum Body-Diode Pulsed Current 32 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=520V, ID=8A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/ms,VDS=100V Body Diode Reverse Recovery Time 0.74 930 1165 1400 pF 80 101 120 pF 7 9 11 pF 1.8 3.7 5.6 W 18.5 23.5 28 nC 5 6.2 7.5 nC 7.5 9.5 11.5 nC VGS=10V, VDS=325V, ID=8A, RG=25W IF=8A,dI/dt=100A/ms,VDS=100V 26 ns 51 ns 65 ns 43 ns 235 295 355 4 5 6 ns μC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using