AOTF8N80

AOT8N80L/AOTF8N80 800V, 7.4A N-Channel MOSFET Product Summary General Description The AOT8N80L & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 900V@150℃ 7.4A RDS(ON) (at VGS=10V) < 1.63Ω 100% UIS Tested 100% Rg Tested Top View TO-220 D TO-220F D G G AOT8N80L D S G AOTF8N80 D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current S AOT8N80L ±30 VGS TC=25°C TC=100°C AOTF8N80 800 7.4 ID Units V V 7.4* 4.6* 4.6 A Pulsed Drain Current C IDM 26 Avalanche Current C IAR 3.8 A Repetitive avalanche energy C EAR 217 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 433 5 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D PD 50 0.4 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOT8N80L 65 AOTF8N80 65 Units °C/W 0.5 0.51 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev1.0: Sepetember 2017 245 2.0 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 800 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V, ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C 900 V ID=250µA, VGS=0V 0.86 V/ oC VDS=800V, VGS=0V 1 VDS=640V, TJ=125°C 10 ±100 3.3 3.9 4.5 nΑ V 1.63 Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4A 1.35 gFS Forward Transconductance VDS=40V, ID=4A 9 VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM V Maximum Body-Diode Continuous Current 7.4 A Maximum Body-Diode Pulsed Current 26 A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1100 1375 1650 pF VGS=0V, VDS=25V, f=1MHz 70 101 132 pF 6 11 16 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω 26 32 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 0.72 S 1 DYNAMIC PARAMETERS Input Capacitance Ciss Coss µA 20 VGS=10V, VDS=640V, ID=8A nC 7.3 nC Qgd Gate Drain Charge 9.1 nC tD(on) Turn-On DelayTime 35 ns tr Turn-On Rise Time 51 ns tD(off) Turn-Off DelayTime 69 ns tf trr Turn-Off Fall Time 41 ns Qrr VGS=10V, VDS=400V, ID=8A, RG=25Ω IF=8A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 380 484 585 4.5 6 7.5 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using