AOTF8T50P

AOTF8T50P 500V,8A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 600V IDM 32A RDS(ON),max < 0.81Ω Qg,typ 13nC Eoss @ 400V 2.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom D Top View TO-220F G G D S S AOTF8T50P Orderable Part Number Package Type Form Minimum Order Quantity AOTF8T50P AOTF8T50PL TO-220F Pb Free TO-220F Green Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS TC=25°C Continuous Drain Current Avalanche Current C TC=100°C C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt J TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds ID ±30 Units V V 8* 8* 5.4* 5.4* A IDM 32 IAR 8 A EAR 32 mJ EAS 421 50 15 mJ dv/dt PD V/ns -55 to 150 W W/°C °C 300 °C 38 0.3 TJ, TSTG 28 0.2 TL Thermal Characteristics Parameter Symbol RθJA Maximum Junction-to-Ambient A,D Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.1.0: July 2014 AOTF8T50PL 500 VGS Gate-Source Voltage Pulsed Drain Current AOTF8T50P AOTF8T50P AOTF8T50PL Units 65 3.3 65 4.5 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 600 ID=250µA, VGS=0V 0.47 VDS=500V, VGS=0V 1 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) VGS=10V, ID=4A gFS Forward Transconductance VDS=40V, ID=4A 6.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS ISM ±100 nA 5 V 0.6 0.81 Ω 1 V Maximum Body-Diode Continuous Current 8 A Maximum Body-Diode Pulsed Current C 32 A Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=100V, f=1MHz Gate Source Charge S 905 pF 42 pF 31 pF 56 pF 3.5 pF 2 Ω VGS=0V, VDS=0 to 400V, f=1MHz VGS=0V, VDS=100V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 µA 3.9 DYNAMIC PARAMETERS Input Capacitance Ciss Co(tr) V/ oC VDS=400V, TJ=125°C Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) V 13 VGS=10V, VDS=400V, ID=8A 19 nC 4.4 nC Qgd Gate Drain Charge 3.4 nC tD(on) Turn-On DelayTime 23 ns tr Turn-On Rise Time 33 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=250V, ID=8A, RG=25Ω 34 ns tf trr Turn-Off Fall Time 21 ns IF=8A,dI/dt=100A/µs,VDS=100V 340 Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 3.5 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using