AOTF9N70

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 800V@150℃ 9A RDS(ON) (at VGS=10V) < 1.2Ω 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK D TO-220F G D S AOT9N70 G D D S S G G AOTF9N70 S AOB9N70 Orderable Part Number Package Type Form Minimum Order Quantity AOT9N70 AOTF9N70 AOTF9N70L AOB9N70L TO-220 Pb Free TO-220F Pb Free TO-220F Green TO-263 Green Tube Tube Tube Tape & Reel 1000 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT(B)9N70 Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=100°C C ID AOTF9N70 700 AOTF9N70L ±30 Units V V 9 9* 9* 5.8 5.8* 5.8* A IDM 33 Avalanche Current C IAR 3.2 A Repetitive avalanche energy C EAR 77 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS dv/dt 154 5 50 mJ V/ns W Junction and Storage Temperature Range TJ, TSTG Pulsed Drain Current Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient A PD TL Symbol RθJA RθCS Maximum Case-to-sink Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.3.0: January 2015 236 1.8 0.4 -55 to 150 27.8 0.22 300 W/ oC °C °C AOT(B)9N70 65 AOTF9N70 65 AOTF9N70L 65 Units °C/W 0.5 0.53 -2.5 -4.5 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 700 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 800 V ID=250µA, VGS=0V 0.84 V/ oC VDS=700V, VGS=0V 1 VDS=560V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.5A gFS Forward Transconductance VDS=40V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.9 4.5 nΑ V 0.94 1.2 Ω 1 V Maximum Body-Diode Continuous Current 9 A Maximum Body-Diode Pulsed Current 33 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=560V, ID=9A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time 3 10 S 0.74 1085 1357 1630 pF 90 113 147 pF 6 7.4 11 pF 2 4 6 Ω 23 28.5 35 nC 5.5 6.8 8.2 nC 9.3 11.6 18 nC VGS=10V, VDS=350V, ID=9A, RG=25Ω 35 ns 61 ns 76 ns 48 IF=9A,dI/dt=100A/µs,VDS=100V ns 300 375 450 6 7.5 9 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using