AOTL66401

AOTL66401 40V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGT TM technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant ID (at VGS=10V) 40V 400A RDS(ON) (at VGS=10V) < 0.7mΩ RDS(ON) (at VGS=4.5V) < 0.95mΩ Applications 100% UIS Tested 100% Rg Tested • Motor Driver • Battery Protection • Power Distribution TOLLA Bottom View Top View D D PIN1 S G G S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AOTL66401 TOLLA Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH TC=25°C Power Dissipation B TC=100°C C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.1: August 2018 IAS 100 A EAS 1500 mJ 300 Steady-State Steady-State W 150 8.3 RqJA RqJC W 5.3 TJ, TSTG Symbol t ≤ 10s A 66 PDSM TA=70°C A 82 PD TA=25°C A V 1600 IDSM TA=70°C ±20 350 IDM TA=25°C Continuous Drain Current Units V 400 ID TC=100°C Maximum 40 -55 to 175 Typ 10 35 0.3 www.aosmd.com Max 15 45 0.5 °C Units °C/W °C/W °C/W Page 1 of 6 AOTL66401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Typ 40 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 1.8 2.3 V 0.55 0.7 0.8 1.05 0.95 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 0.7 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.64 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance μA 5 1.3 VGS=0V, VDS=20V, f=1MHz Units V VDS=40V, VGS=0V IDSS Max mΩ mΩ S 1 V 350 A 19180 pF 3110 pF 180 pF 2.8 4.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 240 340 nC Qg(4.5V) Total Gate Charge 100 nC Qgs Gate Source Charge 52 nC Qgd Gate Drain Charge 22 nC Qoss Output Charge 130 tD(on) Turn-On DelayTime 22 nC ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr f=1MHz VGS=10V, VDS=20V, ID=20A VGS=0V, VDS=20V 15 ns 205 ns 36 ns IF=20A, di/dt=500A/ms 35 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 160 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=20V, RL=1.0W, RGEN=3W 1.4 A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=0.5°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.1: August 2018 www.aosmd.com Page 4 of 6 AOTL66401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 400 300 Current rating ID (A) Power Dissipation (W) 400 200 100 300 200 100 0 0 0 25 50 75 100 125 150 175 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 4 10000 TA=25°C 1000 Power (W) Eoss(uJ) 3 2 100 1 10 0 0 10 20 30 40 1 1E-05 ZqJA Normalized Transient Thermal Resistance VDS (Volts) Figure 14: Coss stored Energy 0.001 0.1 10 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) 1000 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=45°C/W 0.1 PDM 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.1: August 2018 www.aosmd.com Page 5 of 6 AOTL66401 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit &&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.1: August 2018 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6