AOTL66608

AOTL66608 60V N-Channel AlphaSGT General Description TM Product Summary VDS • Trench Power AlphaSGT TM technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 60V 400A RDS(ON) (at VGS=10V) < 0.85mΩ RDS(ON) (at VGS=6V) < 1.1mΩ 100% UIS Tested 100% Rg Tested • Battery Protection • Power Distribution TOLLA D Top View Bottom View D S G PIN1(G) S PIN1(G) Orderable Part Number Package Type Form Minimum Order Quantity AOTL66608 TOLLA Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH TC=25°C Power Dissipation B TC=100°C C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: February 2019 IAS 95 A EAS 1354 mJ 500 Steady-State Steady-State W 250 8.3 RqJA RqJC W 5.3 TJ, TSTG Symbol t ≤ 10s A 58.5 PDSM TA=70°C A 73.5 PD TA=25°C A V 1000 IDSM TA=70°C ±20 400 IDM TA=25°C Continuous Drain Current Units V 400 ID TC=100°C Maximum 60 -55 to 175 Typ 10 35 0.2 www.aosmd.com °C Max 15 45 0.3 Units °C/W °C/W °C/W Page 1 of 6 AOTL66608 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Typ 60 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 2.65 3.3 V 0.7 0.85 1.03 1.25 1.1 RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A 0.85 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.65 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, ID=20A VGS=0V, VDS=30V 1.1 mΩ mΩ S 1 V 350 A 14200 pF 4300 pF 155 pF 2.2 3.3 Ω 205 300 nC 50 nC 50 nC 262 33 nC ns 36 ns 140 ns 65 ns IF=20A, di/dt=500A/ms 50 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 265 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=30V, RL=1.5W, RGEN=3W μA 5 2.1 Units V VDS=60V, VGS=0V IDSS Max A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=0.3°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: February 2019 www.aosmd.com Page 4 of 6 AOTL66608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 500 400 400 Current rating ID (A) Power Dissipation (W) 500 300 200 100 300 200 100 0 0 0 25 50 75 100 125 150 175 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10 10000 TA=25°C 8 6 Power (W) Eoss(uJ) 1000 100 4 10 2 0 0 10 20 30 40 50 60 1 1E-05 ZqJA Normalized Transient Thermal Resistance VDS (Volts) Figure 14: Coss stored Energy 0.001 0.1 10 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) 1000 10 1 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: February 2019 www.aosmd.com Page 5 of 6 AOTL66608 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: February 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6