AOTS21115C

AOTS21115C 20V P-Channel MOSFET General Description Product Summary • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant ID (at VGS=-4.5V) -20V -6.6A RDS(ON) (at VGS=-4.5V) < 40mΩ RDS(ON) (at VGS=-2.5V) < 55mΩ RDS(ON) (at VGS=-1.8V) < 72mΩ Typical ESD protection HBM Class 2 VDS Applications • This device is ideal for Load Switch TSOP6 Top View Bottom View D Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Orderable Part Number Package Type Form Minimum Order Quantity AOTS21115C TSOP-6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.2.0: August 2019 Steady-State Steady-State A 2.5 W 1.6 TJ, TSTG Symbol t ≤ 10s V -26 PD TA=70°C ±8 -5.1 IDM TA=25°C B Units V -6.6 ID TA=70°C Maximum -20 RqJA RqJL -55 to 150 Typ 42 68 23 www.aosmd.com °C Max 50 85 30 Units °C/W °C/W °C/W Page 1 of 5 AOTS21115C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -20 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS, ID=-250mA TJ=55°C ±10 μA -0.95 V 33 40 43 52 VGS=-2.5V, ID=-5.6A 42 55 mΩ VGS=-1.8V, ID=-4.9A 54 72 mΩ -0.15 TJ=125°C Forward Transconductance VDS=-5V, ID=-6.6A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr μA -5 -0.55 gFS Coss Units -1 VGS=-4.5V, ID=-6.6A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-10V, f=1MHz 20 -0.7 S -1 V -3 A 930 pF 90 pF 80 f=1MHz VGS=-4.5V, VDS=-10V, ID=-6.6A mΩ pF 15 30 Ω 8.5 17 nC 1 nC 2.5 nC 12 ns 11 ns 82 ns 35 ns IF=-6.6A, di/dt=500A/ms 25 Body Diode Reverse Recovery Charge IF=-6.6A, di/dt=500A/ms 37 ns nC Body Diode Reverse Recovery Time VGS=-4.5V, VDS=-10V, RL=1.52W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to -1.8V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=85°C/W 0.1 PDM 0.01 0.001 1E-05 Single Pulse Ton 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: August 2019 www.aosmd.com Page 4 of 5 AOTS21115C Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd + DUT Qgs Vds Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs VDC td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC BVDSS Vdd + Rg Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.2.0: August 2019 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5