AOU2N60_001

AOD2N60/AOU2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View VDS 700V@150℃ ID (at VGS=10V) 2A RDS(ON) (at VGS=10V) < 4.4Ω 100% UIS Tested! 100% Rg Tested! TO251 D Top View Bottom View Bottom View D D G G S S G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C D G S Maximum 600 Units V ±30 V 2 ID 1.4 A IDM 8 Avalanche Current C IAR 2 A Repetitive avalanche energy C EAR 60 mJ Single plused avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 120 5 56.8 mJ V/ns W 0.45 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev 6.0: March 2016 PD TJ, TSTG TL Symbol RθJA RθCS Typical 45 Maximum 55 Units °C/W 1.8 0.5 2.2 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 700 ID=250µA, VGS=0V VDS=600V, VGS=0V 0.56 V V/ oC 1 VDS=480V, TJ=125°C 10 ±100 3 µA 4 4.5 nΑ V 4.4 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A 3.6 gFS Forward Transconductance VDS=40V, ID=1A 3.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.79 IS Maximum Body-Diode Continuous Current 2 A ISM Maximum Body-Diode Pulsed Current 8 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=2A S 215 270 325 pF 23 29 35 pF 2.2 2.8 3.4 pF 3.5 4.4 6.6 Ω 9.5 11 nC Qgs Gate Source Charge 1.9 2 nC Qgd Gate Drain Charge 4.7 6 nC tD(on) Turn-On DelayTime 17.2 21 ns tr Turn-On Rise Time 14.3 17 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=300V, ID=2A, RG=25Ω 27 32 ns tf trr Turn-Off Fall Time 17 20 ns IF=2A,dI/dt=100A/µs,VDS=100V 154 185 Qrr Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V 0.8 0.96 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using